48SWTQFN-EP datasheet(8/103 Pages) MAXIM

8 / 103 page

(Note 1)

AVDD3 to EP........................................................-0.5V to +3.9V

AVDD18, DVDD18 to EP......................................-0.5V to +1.9V

IOVDD to EP ........................................................-0.5V to +3.9V

IN+, IN- to EP.......................................................-0.5V to +1.9V

LMN_ to EP (15mA current limit)..........................-0.5V to +3.9V

CLK_, DOUT_ to EP ............................................-0.5V to +1.9V

All Other Pins to EP ............................-0.5V to (VIOVDD + 0.5V)

IN+, IN- Short Circuit to Ground or Supply ...............Continuous

Continuous Power Dissipation (TA = +70°C)

TQFN/SWTQFN (derate 40mW/°C above +70°C)....3200mW

Junction Temperature......................................................+150°C

Storage Temperature........................................ -65°C to +150°C

Lead Temperature (soldering, 10s) .................................+300°C

Soldering Temperature (reflow).......................................+260°C

TQFN/SWTQFN

Junction-to-Ambient Thermal Resistance (θJA) ..........25°C/W

Junction-to-Case Thermal Resistance (θJC).....................1°C

(VAVDD18 = VDVDD18 = 1.7V to 1.9V, VAVDD3 = 3.0V to 3.6V, VIOVDD = 1.7V to 3.6V, RL = 100Ω ±1% (differential), EP connected

to PCB ground (GND), TA = -40°C to +105°C, unless otherwise noted. Typical values are at VAVDD18 = VDVDD18 = VIOVDD = 1.8V,

VAVDD3 = 3.3V, TA = +25°C.) (Note 3)

Note 1: EP connected to PCB ground.

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PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNITS

SINGLE-ENDED INPUTS (ADD_, I2CSEL, PWDN, MS, GPI, DRS, EQS, CDS, HIM, SCK, WS)

High-Level Input Voltage

VIH1

0.65 x

VIOVDD

Low-Level Input Voltage

VIL1

0.35 x

VIOVDD

Input Current

IIN1

VIN = 0V to VIOVDD

-20

+20

µA

THREE-LEVEL LOGIC INPUTS (BWS, CX/TP)

High-Level Input Voltage

VIH

0.7 x

VIOVDD

Low-Level Input Voltage

VIL

0.3 x

VIOVDD

Mid-Level Input Current

IINM

(Note 4)

-10

+10

µA

Input Current

IIN

-150

+150

µA

SINGLE-ENDED OUTPUTS (WS, SCK, SD, CNTL_, INTOUT)

High-Level Output Voltage

VOH1

IOUT = -2mA

DCS = 0

VIOVDD

- 0.3

DCS = 1

VIOVDD

- 0.2

Low-Level Output Voltage

VOL1

IOUT = 2mA

DCS = 0

0.3

DCS = 1

0.2

DC Electrical Characteristics

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these

or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect

device reliability.

Package Thermal Characteristics (Note 2)

Absolute Maximum Ratings

Note 2: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer

board. For detailed information on package thermal considerations, refer to

48SWTQFN-EP Datasheet(PDF) 8 Page - Maxim Integrated Products

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