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R5F10366ASP Datasheet(PDF) 60 Page - Renesas Technology Corp

Part # R5F10366ASP
Description  True low-power platform (63 μA/MHz) for the general-purpose applications, with 1.8-V to 5.5-V operation, 2- to 16-Kbyte code flash memory, and 31 DMIPS at 24 MHz
PDF  114 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

R5F10366ASP Datasheet(HTML) 60 Page - Renesas Technology Corp

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RL78/G12
2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C)
R01DS0193EJ0250 Rev.2.50
Jan 17, 2025
Page 60 of 109
2.7 RAM Data Retention Characteristics
(TA = –40 to +85°C, VSS = 0 V)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Data retention supply voltage
VDDDR
1.46 Note
5.5
V
Note This depends on the POR detection voltage. For a falling voltage, data in RAM are retained until the voltage
reaches the level that triggers a POR reset but not once it reaches the level at which a POR reset is generated.
VDD
STOP instruction execution
Standby release signal
(interrupt request)
STOP mode
RAM data retention
VDDDR
Operation mode
2.8 Flash Memory Programming Characteristics
(TA = –40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
System clock frequency
fCLK
1
24
MHz
Code flash memory rewritable times
Notes 1, 2, 3
Cerwr
Retained for 20 years
TA = 85°C
1,000
Times
Data flash memory rewritable times
Notes 1, 2, 3
Retained for 1 year
TA = 25°C
1,000,000
Retained for 5 years
TA = 85°C
100,000
Retained for 20 years
TA = 85°C
10,000
Notes 1.
1 erase + 1 write after the erase is regarded as 1 rewrite. The retaining years are until next rewrite after the
rewrite.
2.
When using flash memory programmer and Renesas Electronics self programming library
3.
These are the characteristics of the flash memory and the results obtained from reliability testing by
Renesas Electronics Corporation.



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