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R5F10366ASP Datasheet(PDF) 61 Page - Renesas Technology Corp |
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R5F10366ASP Datasheet(HTML) 61 Page - Renesas Technology Corp |
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61 / 114 page  RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C) R01DS0193EJ0250 Rev.2.50 Jan 17, 2025 Page 61 of 109 2.9 Dedicated Flash Memory Programmer Communication (UART) (TA = –40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Symbol Conditions MIN. TYP. MAX. Unit Transfer rate During serial programming 115,200 1,000,000 bps 2.10 Timing of Entry to Flash Memory Programming Modes (TA = –40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Symbol Conditions MIN. TYP. MAX. Unit Time to complete the communication for the initial setting after the external reset is released tSUINIT POR and LVD reset are released before external reset release 100 ms Time to release the external reset after the TOOL0 pin is set to the low level tSU POR and LVD reset are released before external reset release 10 µs Time to hold the TOOL0 pin at the low level after the external reset is released (excluding the processing time of the firmware to control the flash memory) tHD POR and LVD reset are released before external reset release 1 ms RESET TOOL0 <1> <2> <3> tSUINIT tHD + software processing time 1-byte data for setting mode tSU <4> <1> The low level is input to the TOOL0 pin. <2> The external reset is released (POR and LVD reset must be released before the external reset is released.). <3> The TOOL0 pin is set to the high level. <4> Setting of the flash memory programming mode by UART reception and complete the baud rate setting. Remark tSUINIT: Communication for the initial setting must be completed within 100 ms after the external reset is released during this period. tSU: Time to release the external reset after the TOOL0 pin is set to the low level tHD: Time to hold the TOOL0 pin at the low level after the external reset is released (excluding the processing time of the firmware to control the flash memory) |
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