| Electronic Components Datasheet Search |
|
TNETV1647GSTZWT Datasheet(PDF) 91 Page - Texas Instruments |
|
|
|
|||||||||||||||||||||||||||||
TNETV1647GSTZWT Datasheet(HTML) 91 Page - Texas Instruments |
|
91 / 236 page ![]() TMS320DM6441 www.ti.com SPRS359E – SEPTEMBER 2006 – REVISED AUGUST 2010 5.2 Recommended Operating Conditions MIN NOM MAX UNIT 1.00 1.05 1.10 Supply voltage, Core (CVDD, VDDA_1P1V, USB_VDDA1P2LDO (1), CVDD V CVDDDSP) (2) 1.15 1.2 1.25 Supply voltage, I/O, 3.3V (DVDD33, USB_DVDDA3P3) 3.15 3.3 3.45 V DVDD Supply voltage, I/O, 1.8V (DVDD18, DVDDR2, DDR_VDDDLL, PLLVDD18, 1.71 1.8 1.89 V VDDA_1P8V, USB_VDD1P8, MXVDD, M24VDD) Supply ground (VSS, VSSA_1P8V, VSSA_1P1V, DDR_VSSDLL, VSS USB_VSSREF, USB_VSS1P8, USB_VSSA3P3, USB_VSSA1P2LDO, 0 0 0 V MXVSS (3), M24V SS (3)) DDR_VREF DDR2 reference voltage(4) 0.49DVDDR2 0.5DVDDR2 0.51DVDDR2 V DDR_ZP DDR2 impedance control, connected via 200 Ω resistor to VSS VSS V DDR_ZN DDR2 impedance control, connected via 200 Ω resistor to DVDDR2 DVDDR2 V DAC_VREF DAC reference voltage input 0.475 0.5 0.525 V DAC_RBIAS DAC biasing, connected via 4 k Ω resistor to VSSA_1P8V VSSA_1P8V V USB_VBUS USB external charge pump input 4.75 5 5.25 V High-level input voltage, I/O, 3.3V 2 VIH V High-level input voltage, non-DDR I/O, 1.8V 0.65DVDD Low-level input voltage, I/O, 3.3V 0.8 VIL V Low-level input voltage, non-DDR I/O, 1.8V 0.35DVDD TC Operating case temperature Default 0 85 °C 1.05 V core 20 405 FSYSCLK1 DSP Operating Frequency (SYSCLK1) MHz 1.2 V core 20 513 (1) This pin is an internal LDO output and connected via 1 µF capacitor to USB_VSSA1P2LDO. (2) Future variants of TI SOC devices may operate at voltages ranging from 0.9 V to 1.4 V to provide a range of system power/performance options. TI highly recommends that users design-in a supply that can handle multiple voltages within this range (i.e., 1.0 V, 1.05 V, 1.1 V, 1.14 V, 1.2, 1.26 V with ±3% tolerances) by implementing simple board changes such as reference resistor values or input pin configuration modifications. Not incorporating a flexible supply may limit the system's ability to easily adapt to future versions of TI SOC devices. (3) Oscillator ground must be kept separate from other grounds and connected directly to the crystal load capacitor ground. (4) DDR_VREF is expected to equal 0.5DVDDR2 of the transmitting device and to track variations in the DVDDR2. Copyright © 2006–2010, Texas Instruments Incorporated Device Operating Conditions 91 Submit Documentation Feedback Product Folder Link(s): TMS320DM6441 |
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |