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MCP47CMB02 Datasheet(PDF) 5 Page - Microchip Technology

Part # MCP47CMB02
Description  8/10/12-Bit Digital-to-Analog Converters, 1 LSb INL Single/Dual Voltage Outputs with I2C Interface
PDF  124 Pages
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Manufacturer  MICROCHIP [Microchip Technology]
Direct Link  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

MCP47CMB02 Datasheet(HTML) 5 Page - Microchip Technology

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 2018-2019 Microchip Technology Inc.
DS20006089B-page 5
MCP47CXBXX
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings(†)
Voltage on VDD with respect to VSS ......................................................................................................... -0.6V to +6.5V
Voltage on all pins with respect to VSS ............................................................................................. -0.6V to VDD + 0.3V
Input clamp current, IIK (VI <0, VI >VDD, VI >VPP on HV pins) ..........................................................................±20 mA
Output clamp current, IOK (VO <0 or VO >VDD)...................................................................................................±20 mA
Maximum current out of VSS pin
(Single) ..........................................................................................................50 mA
(Dual)...........................................................................................................100 mA
Maximum current into VDD pin
(Single) ..........................................................................................................50 mA
(Dual)...........................................................................................................100 mA
Maximum current sourced by the VOUT pin ............................................................................................................20 mA
Maximum current sunk by the VOUT pin..................................................................................................................20 mA
Maximum current source/sunk by the VREF(0) pin (in Band Gap mode) .................................................................20 mA
Maximum current sunk by the VREFx pin (when VREF is in Unbuffered mode) ......................................................175 µA
Maximum current sourced by the VREFx pin ............................................................................................................20 µA
Maximum current sunk by the VREF pin.................................................................................................................125 µA
Maximum input current source/sunk by SDA, SCL pins ..........................................................................................2 mA
Maximum output current sunk by SDA output pin ..................................................................................................25 mA
Total power dissipation(1) .....................................................................................................................................400 mW
ESD protection on all pins
±6 kV (HBM)
±400V (MM)
±2 kV (CDM)
Latch-up (per JEDEC JESD78A) at +125°C ......................................................................................................±100 mA
Storage temperature ...............................................................................................................................-65°C to +150°C
Ambient temperature with power applied ...............................................................................................-55°C to +125°C
Soldering temperature of leads (10 seconds) ....................................................................................................... +300°C
Maximum Junction Temperature (TJ).................................................................................................................... +150°C
Note 1: Power dissipation is calculated as follows:
PDIS =VDD x{IDD –  IOH}+  {(VDD –VOH)x IOH}+ (VOL xIOL)
† Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only and functional operation of the device at those or any other conditions above those indicated
in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended
periods may affect device reliability.



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