XM014035B datasheet(39/101 Pages) XMOS

39 / 101 page

XU6--FB6 Datasheet

ESD Stress Voltage

Symbol

Parameter

MIN

TYP

MAX

UNITS

Notes

HBM

Human body model

CDM

Charged Device Model

Figure 8:

ESD stress

voltage

.6 Reset Timing

Symbol

Parameters

MIN

TYP

MAX

UNITS

Notes

T(RST)

Reset pulse width

µs

Vth(VDD)

POR threshold for VDD

Vth(VDDIOB8)

POR threshold for VDDIOB8

T(INIT)

Initialization time

µs

Figure

Reset timing

A Shows the time taken to start booting after RST_N has gone high.

Power Consumption

Symbol

Parameter

MIN TYP MAX

UNITS

Notes

Iddq(VDD)

Quiescent VDD current

A, B, C

Tile power dissipation

mW/MHz

A, D, E

I(VDD)

Active VDD current

A, F

I(PLL_AVDD)

PLL_AVDD current

I(USB_VDD) (hs)

VDD

current in HS mode

I(USB_VDD) (fs tx)

VDD

current on FS

transmission

I(USB_VDD8) (hs)

VDD8 current in HS mode

6 mA

I(USB_VDD8) (fs tx)

VDD8 current on FS

transmission

6.8

I(VDD) (hs)

VDD current in hs mode

I(VDD) (fs tx)

VDD current for USB FS tx

I(MIPI_VDDA)

MIPI_VDDA current

I(MIPI_VDD8A)

MIPI_VDD8A current

Figure

xCORE Tile

currents

A Use for budgetary purposes only.

B Assumes typical tile and I/O voltages with no switching activity.

C Excludes PLL current.

D Assumes typical tile and I/O voltages with nominal switching activity.

E PD(TYP) value is the usage power consumption under typical operating conditions.

F Measurement conditions: VDD = . V, VDDIO = .8 V,

°C.

G PLL_AVDD = . V

The tile power consumption of the device is highly application dependent and should be

used for budgetary purposes only.

XM014035B Datasheet(PDF) 39 Page - Xmos Ltd.

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