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FS32R274VBK2MMM Datasheet(PDF) 37 Page - NXP Semiconductors

Part # FS32R274VBK2MMM
Description  S32R274/S32R264 Series Data Sheet
PDF  78 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

FS32R274VBK2MMM Datasheet(HTML) 37 Page - NXP Semiconductors

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7. DAC PSRR is 30 dB minimum for DAC output levels of 1/3 of full-scale or less. DAC PSRR is 24 dB minimum with the
DAC output at full-scale.
Memory modules
8.1 Flash memory program and erase specifications
NOTE
All timing, voltage, and current numbers specified in this
section are defined for a single embedded flash memory within
an SoC, and represent average currents for given supplies and
operations.
Table 28 shows the estimated Program/Erase times.
Table 28. Flash memory program and erase specifications
Symbol
Characteristic1
Typ2
Factory
Programming3, 4
Field Update
Unit
Initial
Max
Initial
Max, Full
Temp
Typical
End of
Life5
Lifetime Max6
20°C ≤TA
≤30°C
-40°C ≤TJ
≤150°C
-40°C ≤TJ
≤150°C
≤ 1,000
cycles
≤ 250,000
cycles
tdwpgm
Doubleword (64 bits) program time 43
100
150
55
500
μs
tppgm
Page (256 bits) program time
73
200
300
108
500
μs
tqppgm
Quad-page (1024 bits) program
time
268
800
1,200
396
2,000
μs
t16kers
16 KB Block erase time
168
290
320
250
1,000
ms
t16kpgm
16 KB Block program time
34
45
50
40
1,000
ms
t32kers
32 KB Block erase time
217
360
390
310
1,200
ms
t32kpgm
32 KB Block program time
69
100
110
90
1,200
ms
t64kers
64 KB Block erase time
315
490
590
420
1,600
ms
t64kpgm
64 KB Block program time
138
180
210
170
1,600
ms
t256kers
256 KB Block erase time
884
1,520
2,030
1,080
4,000
—
ms
t256kpgm
256 KB Block program time
552
720
880
650
4,000
—
ms
1. Program times are actual hardware programming times and do not include software overhead. Block program times
assume quad-page programming.
2. Typical program and erase times represent the median performance and assume nominal supply values and operation at
25 °C. Typical program and erase times may be used for throughput calculations.
3. Conditions: ≤ 150 cycles, nominal voltage.
4. Plant Programing times provide guidance for timeout limits used in the factory.
5. Typical End of Life program and erase times represent the median performance and assume nominal supply values.
Typical End of Life program and erase values may be used for throughput calculations.
6. Conditions: -40°C ≤ TJ ≤ 150°C, full spec voltage.
8
Memory modules
S32R274/S32R264 Series Data Sheet, Rev. 6, 06/2021
NXP Semiconductors
37



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