 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
S29GL01GP10FFIR12 Datasheet(PDF) 60 Page - SPANSION |
|
|
|||||||||||||||||||||||||||||
S29GL01GP10FFIR12 Datasheet(HTML) 60 Page - SPANSION |
|
|
60 / 77 page  60 S29GL-P MirrorBit® Flash Family S29GL-P_00_A7 November 8, 2007 Data Sheet (Pre limin ar y) 11.7.3 S29GL-P Erase and Program Operations Notes 1. Not 100% tested. 2. See Section 11.6 for more information. 3. For 1–32 words/1–64 bytes programmed. 4. Effective write buffer specification is based upon a 32-word/64-byte write buffer operation. 5. Unless otherwise indicated, AC specifications for 110 ns speed option are tested with VIO = VCC = 2.7 V. AC specifications for 110 ns speed options are tested with VIO = 1.8 V and VCC = 3.0 V. Table 11.6 S29GL-P Erase and Program Operations Parameter Description Speed Options Unit JEDEC Std. 90 100 110 120 130 tAVAV tWC Write Cycle Time (Note 1) Min 90 100 110 120 130 ns tAVWL tAS Address Setup Time Min 0 ns tASO Address Setup Time to OE# low during toggle bit polling Min 15 ns tWLAX tAH Address Hold Time Min 45 ns tAHT Address Hold Time From CE# or OE# high during toggle bit polling Min 0 ns tDVWH tDS Data Setup Time Min 30 ns tWHDX tDH Data Hold Time Min 0 ns tCEPH CE# High during toggle bit polling Min 20 ns tOEPH Output Enable High during toggle bit polling Min 20 ns tGHWL tGHWL Read Recovery Time Before Write (OE# High to WE# Low) Min 0 ns tELWL tCS CE# Setup Time Min 0 ns tWHEH tCH CE# Hold Time Min 0 ns tWLWH tWP Write Pulse Width Min 35 ns tWHDL tWPH Write Pulse Width High Min 30 ns tWHWH1 tWHWH1 Write Buffer Program Operation (Notes 2, 3) Typ 480 µs Effective Write Buffer Program Operation (Notes 2, 4)Per Word Typ 15 µs Accelerated Effective Write Buffer Program Operation (Notes 2, 4) Per Word Typ 13.5 µs Program Operation (Note 2) Word Typ 60 µs Accelerated Programming Operation (Note 2) Word Typ 54 µs tWHWH2 tWHWH2 Sector Erase Operation (Note 2) Typ 0.5 sec tVHH VHH Rise and Fall Time (Note 1) Min 250 ns tVCS VCC Setup Time (Note 1) Min 35 µs tBUSY Erase/Program Valid to RY/BY# Delay Max 90 ns tSEA Sector Erase Timeout Max 50 µs |
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
