MB95F613K datasheet(104/110 Pages) CYPRESS

104 / 110 page

Document Number: 002-04698 Rev. *A

Page 104 of 110

PRELIMINARY

MB95610H Series

18.6 Flash Memory Program/Erase Characteristics

*1: VCC = 5.5 V, TA = 25 °C, 0 cycle

*2: VCC = 2.4 V, TA = 85 °C, 100000 cycles

*3: These values were converted from the result of a technology reliability assessment. (These values were converted from the result

of a high temperature accelerated test using the Arrhenius equation with the average temperature being

85 °C.)

Parameter

Value

Unit

Remarks

Min

Typ

Max

Sector erase time

(2 Kbyte sector)

—0.3*1

1.6*2

The time of writing “0x00” prior to erasure is excluded.

Sector erase time

(32 Kbyte sector)

—0.6*1

3.1*2

The time of writing “0x00” prior to erasure is excluded.

Byte writing time

—

272

µs

System-level overhead is excluded.

Program/erase cycle

100000

—

cycle

Power supply voltage at

program/erase

2.4

—

5.5

Flash memory data

retention time

20*3

——

year

Average TA = 85 °C

Number of program/erase cycles: 1000 or below

10*3

——

Average TA = 85 °C

Number of program/erase cycles: 1001 to 10000 inclusive

5*3

——

Average TA = 85 °C

Number of program/erase cycles: 10001 or above

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