S75WS256NDFBAWMB datasheet(37/216 Pages) SPANSION

37 / 216 page

February 17, 2005 S75WS-N-00_A0

S75WS256Nxx Based MCPs

Advance

Information

counter decrements for each data load operation, NOT for each unique write-buffer-address loca-

tion. Once the specified number of write buffer locations have been loaded, the system must then

write the Program Buffer to Flash command at the Sector Address. Any other address/data write

combinations abort the Write Buffer Programming operation. The device goes busy. The Data Bar

polling techniques should be used while monitoring the last address location loaded into the write

buffer. This eliminates the need to store an address in memory because the system can load the

last address location, issue the program confirm command at the last loaded address location,

and then data bar poll at that same address. DQ7, DQ6, DQ5, DQ2, and DQ1 should be monitored

to determine the device status during Write Buffer Programming.

The write-buffer embedded programming operation can be suspended using the standard sus-

pend/resume commands. Upon successful completion of the Write Buffer Programming operation,

the device returns to READ mode.

The Write Buffer Programming Sequence is ABORTED under any of the following conditions:

Load a value that is greater than the page buffer size during the Number of Locations to Pro-

gram step.

Write to an address in a sector different than the one specified during the Write-Buffer-Load

command.

Write an Address/Data pair to a different write-buffer-page than the one selected by the

Starting Address during the write buffer data loading stage of the operation.

Write data other than the Confirm Command after the specified number of data load cycles.

The ABORT condition is indicated by DQ1 = 1, DQ7 = Data# (for the last address location loaded),

DQ6 = TOGGLE, DQ5 = 0. This indicates that the Write Buffer Programming Operation was

ABORTED. A Write-to-Buffer-Abort reset command sequence is required when using the write

buffer Programming features in Unlock Bypass mode. Note that the Secured Silicon sector, au-

toselect, and CFI functions are unavailable when a program operation is in progress.

Write buffer programming is allowed in any sequence of memory (or address) locations. These

flash devices are capable of handling multiple write buffer programming operations on the same

write buffer address range without intervening erases.

Use of the write buffer is strongly recommended for programming when multiple words are to be

programmed. Write buffer programming is approximately eight times faster than programming

one word at a time.

S75WS256NDFBAWMB Datasheet(PDF) 37 Page - SPANSION