S75WS256NDFBAWMB datasheet(44/216 Pages) SPANSION

44 / 216 page

S75WS256Nxx Based MCPs

S75WS-N-00_A0 February 17, 2005

Ad van c e

Inf o rmation

After the programming operation has been suspended, the system can read array data from any

non-suspended sector. The Program Suspend command may also be issued during a program-

ming operation while an erase is suspended. In this case, data may be read from any addresses

not in Erase Suspend or Program Suspend. If a read is needed from the Secured Silicon Sector

area, then user must use the proper command sequences to enter and exit this region.

The system may also write the Autoselect command sequence when the device is in Program Sus-

pend mode. The device allows reading Autoselect codes in the suspended sectors, since the codes

are not stored in the memory array. When the device exits the Autoselect mode, the device re-

verts to Program Suspend mode, and is ready for another valid operation. See Autoselect for more

information.

After the Program Resume command is written, the device reverts to programming. The system

can determine the status of the program operation using the DQ7 or DQ6 status bits, just as in

the standard program operation. See Write Operation Status for more information.

The system must write the Program Resume command (address bits are don't care) to exit the

Program Suspend mode and continue the programming operation. Further writes of the Program

Resume command are ignored. Another Program Suspend command can be written after the de-

vice has resumed programming.

The following is a C source code example of using the program suspend function. Refer to the

Spansion Low Level Driver User’s Guide (available on www.amd.com and www.fujitsu.com)

for general information on Spansion Flash memory software development guidelines.

/* Example: Program suspend command */

*( (UINT16 *)base_addr + 0x000 ) = 0x00B0;

/* write suspend command

The following is a C source code example of using the program resume function. Refer to the

Spansion Low Level Driver User’s Guide (available on www.amd.com and www.fujitsu.com)

for general information on Spansion Flash memory software development guidelines.

/* Example: Program resume command */

*( (UINT16 *)base_addr + 0x000 ) = 0x0030;

/* write resume command

8.5.7

Accelerated Program/Chip Erase

Accelerated single word programming, write buffer programming, sector erase, and chip erase

operations are enabled through the ACC function. This method is faster than the standard chip

program and erase command sequences.

The accelerated chip program and erase functions must not be used more than 10 times

per sector. In addition, accelerated chip program and erase should be performed at room tem-

perature (25

°C ±10°C).

Software Functions and Sample Code

Table 8.18 Program Suspend

(LLD Function = lld_ProgramSuspendCmd)

Cycle

Operation

Byte Address

Word Address

Data

Write

Bank Address

00B0h

Table 8.19 Program Resume

(LLD Function = lld_ProgramResumeCmd)

Cycle

Operation

Byte Address

Word Address

Data

Write

Bank Address

0030h

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