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S75WS256NDFBAWMB Datasheet(PDF) 39 Page - SPANSION

Part # S75WS256NDFBAWMB
Description  Stacked Multi-Chip Product (MCP)
PDF  216 Pages
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Manufacturer  SPANSION [SPANSION]
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S75WS256NDFBAWMB Datasheet(HTML) 39 Page - SPANSION

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February 17, 2005 S75WS-N-00_A0
S75WS256Nxx Based MCPs
37
Advance
Information
Figure 8.4 Write Buffer Programming Operation
8.5.3
Sector Erase
The sector erase function erases one or more sectors in the memory array. (See Table 13.1 and
Figure 8.5) The device does not require the system to preprogram prior to erase. The Embedded
Erase algorithm automatically programs and verifies the entire memory for an all zero data pat-
tern prior to electrical erase. After a successful sector erase, all locations within the erased sector
contain FFFFh. The system is not required to provide any controls or timings during these
operations.
After the command sequence is written, a sector erase time-out of no less than tSEA occurs. Dur-
ing the time-out period, additional sector addresses and sector erase commands may be written.
Loading the sector erase buffer may be done in any sequence, and the number of sectors may be
from one sector to all sectors. The time between these additional cycles must be less than tSEA.
Write Unlock Cycles:
Address 555h, Data AAh
Address 2AAh, Data 55h
Issue
Write Buffer Load Command:
Address 555h, Data 25h
Load Word Count to Program
Program Data to Address:
SA = wc
Unlock Cycle 1
Unlock Cycle 2
wc = number of words – 1
Yes
Yes
Yes
Yes
Yes
No
No
No
No
No
wc = 0?
Write Buffer
Abort Desired?
Write Buffer
Abort?
Polling Status
= Done?
Error?
FAIL. Issue reset command
to return to read array mode.
Write to a Different
Sector Address to Cause
Write Buffer Abort
PASS. Device is in
read mode.
Confirm command:
SA 29h
Wait 4
µs
Perform Polling Algorithm
(see Write Operation Status
flowchart)
Write Next Word,
Decrement wc:
PA
data , wc = wc – 1
RESET. Issue Write Buffer
Abort Reset Command



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