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S75WS256NDFBAWMB Datasheet(PDF) 20 Page - SPANSION |
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S75WS256NDFBAWMB Datasheet(HTML) 20 Page - SPANSION |
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20 / 216 page  Publication Number S75WS-N-00 Revision A Amendment 0 Issue Date February 17, 2005 General Description The Spansion S29WS256/128/064N are Mirrorbit™ Flash products fabricated on 110 nm process technology. These burst mode Flash devices are capable of performing simultaneous read and write operations with zero latency on two separate banks using separate data and address pins. These products can operate up to 80 MHz and use a single VCC of 1.7 V to 1.95 V that makes them ideal for today’s demanding wireless applications requiring higher density, better per- formance and lowered power consumption. Distinctive Characteristics Single 1.8 V read/program/erase (1.70–1.95 V) 110 nm MirrorBit™ Technology Simultaneous Read/Write operation with zero latency 32-word Write Buffer Sixteen-bank architecture consisting of 16/8/4 Mwords for WS256N/128N/064N, respectively Four 16 Kword sectors at both top and bottom of memory array 254/126/62 64 Kword sectors (WS256N/128N/ 064N) Programmable burst read modes — Linear for 32, 16 or 8 words linear read with or without wrap-around — Continuous sequential read mode Secured Silicon Sector region consisting of 128 words each for factory and customer 20-year data retention (typical) Cycling Endurance: 100,000 cycles per sector (typical) RDY output indicates data available to system Command set compatible with JEDEC (42.4) standard Hardware (WP#) protection of top and bottom sectors Dual boot sector configuration (top and bottom) Offered Packages — WS064N: 80-ball FBGA (7 mm x 9 mm) — WS256N/128N: 84-ball FBGA (8 mm x 11.6 mm) Low VCC write inhibit Persistent and Password methods of Advanced Sector Protection Write operation status bits indicate program and erase operation completion Suspend and Resume commands for Program and Erase operations Unlock Bypass program command to reduce programming time Synchronous or Asynchronous program operation, independent of burst control register settings ACC input pin to reduce factory programming time Support for Common Flash Interface (CFI) Industrial Temperature range (contact factory) Performance Characteristics S75WS-N MirrorBit™ Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit (16/8/4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory Data Sheet PRELIMINARY Read Access Times Speed Option (MHz) 80 66 54 Max. Synch. Latency, ns (tIACC) 80 80 80 Max. Synch. Burst Access, ns (tBACC) 9 11.2 13.5 Max. Asynch. Access Time, ns (tACC) 80 80 80 Max CE# Access Time, ns (tCE) 80 80 80 Max OE# Access Time, ns (tOE) 13.5 13.5 13.5 Current Consumption (typical values) Continuous Burst Read @ 66 MHz 35 mA Simultaneous Operation (asynchronous) 50 mA Program (asynchronous) 19 mA Erase (asynchronous) 19 mA Standby Mode (asynchronous) 20 µA Typical Program & Erase Times Single Word Programming 40 µs Effective Write Buffer Programming (VCC) Per Word 9.4 µs Effective Write Buffer Programming (VACC) Per Word 6 µs Sector Erase (16 Kword Sector) 150 ms Sector Erase (64 Kword Sector) 600 ms |
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