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DSPIC33EP128GS708 Datasheet(PDF) 390 Page - Microchip Technology |
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DSPIC33EP128GS708 Datasheet(HTML) 390 Page - Microchip Technology |
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390 / 484 page  dsPIC33EPXXXGS70X/80X FAMILY DS70005258C-page 390 2016-2018 Microchip Technology Inc. TABLE 30-14: DC CHARACTERISTICS: PROGRAM MEMORY DC CHARACTERISTICS Standard Operating Conditions: 3.0V to 3.6V (unless otherwise stated) Operating temperature -40°C TA +85°C for Industrial -40°C TA +125°C for Extended Param No. Symbol Characteristic Min. Typ.(1) Max. Units Conditions Program Flash Memory D130 EP Cell Endurance 10,000 — — E/W -40 C to +125C D131 VPR VDD for Read 3.0 — 3.6 V D132b VPEW VDD for Self-Timed Write 3.0 — 3.6 V D134 TRETD Characteristic Retention 20 — — Year Provided no other specifications are violated, -40 C to +125C D135 IDDP Supply Current during Programming(2) —10 — mA D136 IPEAK Instantaneous Peak Current During Start-up —— 150 mA D137a TPE Page Erase Time 19.7 — 20.1 ms TPE = 146893 FRC cycles, TA = +85°C (Note 3) D137b TPE Page Erase Time 19.5 — 20.3 ms TPE = 146893 FRC cycles, TA = +125°C (Note 3) D138a TWW Word Write Cycle Time 46.5 — 47.3 µs TWW = 346 FRC cycles, TA = +85°C (Note 3) D138b TWW Word Write Cycle Time 46.0 — 47.9 µs TWW = 346 FRC cycles, TA = +125°C (Note 3) D139a TRW Row Write Time 667 — 679 µs TRW = 4965 FRC cycles, TA = +85°C (Note 3) D139b TRW Row Write Time 660 — 687 µs TRW = 4965 FRC cycles, TA = +125°C (Note 3) Note 1: Data in “Typ.” column is at 3.3V, +25°C unless otherwise stated. 2: Parameter characterized but not tested in manufacturing. 3: Other conditions: FRC = 7.37 MHz, TUN<5:0> = 011111 (for Minimum), TUN<5:0> = 100000 (for Maximum). This parameter depends on the FRC accuracy (see Table 30-20) and the value of the FRC Oscillator Tuning register (see Register 9-4). For complete details on calculating the Minimum and Maximum time, see Section 5.3 “Programming Operations”. |
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