R7F100LLL3CFB datasheet(133/148 Pages) RENESAS

133 / 148 page

RL78/L23

2. Electrical Characteristics

R01DS0502EJ0110 Rev.1.10

Page 133 of 145

Oct 31, 2025

2.8

Flash Memory Programming Characteristics

Note 1.

1 erase + 1 write after the erase is regarded as 1 rewrite. The retaining years are until next rewrite after the rewrite.

Note 2.

The listed numbers of times apply when the flash memory programmer or self-programming function is in use.

Note 3.

These are the characteristics of the flash memory and the results obtained from reliability testing by Renesas Electronics

Corporation.

Note 4.

This temperature is the average value at which data are retained.

(TA = -40 to +105°C, 1.6 V ≤ VDD ≤ 5.5 V, VSS = 0 V)

Item

Symbols

Conditions

Min.

Typ.

Max.

Unit

CPU/peripheral hardware clock frequency

fCLK

132

MHz

Number of code flash rewritesNotes 1, 2, 3

Cerwr

Retained for 10 years

TA = +85°CNote 4

10,000

Times

Retained for 20 years

TA = +85°CNote 4

1,000

Number of data flash rewritesNotes 1, 2, 3

Retained for 1 year

TA = +25°C

1,000,000

Retained for 5 years

TA = +85°CNote 4

100,000

Retained for 20 years

TA = +85°CNote 4

10,000

R7F100LLL3CFB Datasheet(PDF) 133 Page - Renesas Technology Corp

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