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R7F100LLL3CFB Datasheet(PDF) 134 Page - Renesas Technology Corp |
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R7F100LLL3CFB Datasheet(HTML) 134 Page - Renesas Technology Corp |
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134 / 148 page ![]() RL78/L23 2. Electrical Characteristics R01DS0502EJ0110 Rev.1.10 Page 134 of 145 Oct 31, 2025 1. Code flash memory Caution The listed values do not include the time until the operations of the flash memory start following execution of an instruction by software. 2. Data flash memory Caution The listed values do not include the time until the operations of the flash memory start following execution of an instruction by software. (TA = -40 to +105°C, 1.6 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Item Symbols fCLK = 1 MHz fCLK = 2 MHz, 3 MHz 4 MHz ≤ fCLK < 8 MHz 8 MHz ≤ fCLK < 32 MHz fCLK = 32 MHz Unit Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Programming time 4 bytes tP4 — 74.7 656.5 — 51.0 464.6 — 41.7 384.8 — 37.1 346.2 — 34.2 321.9 µs Erasure time 2 Kbytes tE2K — 10.4 312.2 — 7.7 258.5 — 6.4 231.8 — 5.8 218.4 — 5.6 214.4 ms Blank checking time 4 bytes tBC4 — — 38.4 — — 19.2 — — 13.1 — — 10.2 — — 8.3 µs 2 Kbytes tBC2K — — 2618.9 — — 1309.5 — — 658.3 — — 332.8 — — 234.1 µs Time taken to forcibly stop the erasure tSED — — 18.0 — — 14.0 — — 12.0 — — 11.0 — — 10.3 µs Security setting time tAWSSAS — 18.2 526.2 — 14.4 469.2 — 12.5 441.1 — 11.6 427.1 — 11.3 422.6 ms Time until programming starts following cancellation of the STOP instruction — 20— — 20— — 20— — 20— — 20— — µs (TA = -40 to +105°C, 1.6 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Item Symbols fCLK = 1 MHz fCLK = 2 MHz, 3 MHz 4 MHz ≤ fCLK < 8 MHz 8 MHz ≤ fCLK < 32 MHz fCLK = 32 MHz Unit Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Programming time 1 byte tP4 — 74.7 656.5 — 51.0 464.6 — 41.7 384.8 — 37.1 346.2 — 34.2 321.9 µs Erasure time 256 bytes tE2K — 7.8 259.2 — 6.4 232.0 — 5.8 218.5 — 5.5 211.8 — 5.4 209.7 ms Blank checking time 1 byte tBC4 — — 38.4 — — 19.2 — — 13.1 — — 10.2 — — 8.3 µs 256 bytes tBC2K — — 1326.1 — — 663.1 — — 335.1 — — 171.2 — — 121.0 µs Time taken to forcibly stop the erasure tSED — — 18.0 — — 14.0 — — 12.0 — — 11.0 — — 10.3 µs Time until programming starts following cancellation of the STOP instruction — 20— — 20— — 20— — 20— — 20— — µs Time until reading starts following setting DFLCTL.DFLEN to 1 — 0.25 — — 0.25 — — 0.25 — — 0.25 — — 0.25 — — µs |
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