LPC2921 datasheet(69/81 Pages) PHILIPS

69 / 81 page

LPC2921_2923_2925_0

Preliminary data sheet

Rev. 00.01 — 24 October 2008

69 of 81

NXP Semiconductors

LPC2921/2923/2925

ARM9 microcontroller with CAN and LIN

9.5 Dynamic characteristics: flash memory

[1]

All parameters are guaranteed over the virtual junction temperature range by design. Pre-testing is performed at Tamb =125 °C ambient

temperature on wafer level. Cased products are tested at Tamb =25 °C (final testing). Both pre-testing and final testing use correlated

test conditions to cover the specified temperature and power supply voltage range.

Table 36.

Flash characteristics

VDD(CORE) =VDD(OSC_PLL); VDD(IO) = 2.7 V to 3.6 V; VDDA(ADC3V3) = 3.0 V to 3.6 V; all voltages are measured with respect to

ground.[1]

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Nendu

endurance

number of

program/erase cycles

10,000

<tbd>

cycles

tret

retention time

average Tamb = 85 °C

<tbd>

years

tprog

programming time

word

<tbd>

μs

ter

erase time

page

<tbd>

global

<tbd>

sector

100

105

tinit

initialization time

150

μs

twr(pg)

page write time

0.95

1.05

tfl(BIST)

flash word BIST time

ta(clk)

clock access time

63.4

ta(A)

address access time

60.3

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