H5GQ2H24AFR-R0C datasheet(69/172 Pages) HYNIX

69 / 172 page

This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any

responsability for use of circuits described. No patent licenses are implied.

Rev. 1.2 /Nov. 2011

H5GQ2H24AFR

The row remains active until a PRECHARGE command (or READ or WRITE command with Auto Pre‐

charge) is issued to the bank.

Figure 39. Active Command

Figure 40. Bank Activation Command Cycle

A8‐A11 (A12)

A0, A1,A6,A7

LOW

RA = Row Address

CA = Column Address

BA = Bank Address

Row Activation

CS#

WE#

CAS#

RAS#

CKE#

DONʹT CARE

BA0‐BA3

A2‐A5

BA0,1,2,3

A2,3,4,5

A8,9,10,11, (12)

A0,1,6,7

CK#

CMD

ADDR

RA RA

BA CA

RA RA

tRCD

tRP

tRAS

tRC

BA = bank address; RA = row address; CA = column address

tRCD = tRCDRD, tRCDWR, tRCDRTR, tRCDWTR or tRCDLTR, depending on command

(*) = could also be PREALL

NOP

ACT

NOP

RD/WR

NOP

PRE*

NOP

ACT

NOP

Donʹt Care

Ta0

Ta1

Tb0

Tb1

Tc1

Tc0

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