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H5GQ2H24AFR-R0C Datasheet(PDF) 52 Page - Hynix Semiconductor |
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H5GQ2H24AFR-R0C Datasheet(HTML) 52 Page - Hynix Semiconductor |
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52 / 172 page ![]() This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsability for use of circuits described. No patent licenses are implied. Rev. 1.2 /Nov. 2011 52 H5GQ2H24AFR 4.5. MODE REGISTER 4 (MR4) Mode Register 4 defines the Error Detection Code (EDC) features of GDDR5 SGRAMs as shown in Figure 28. The register is programmed via the MODE REGISTER SET (MRS) command with BA0=0, BA1=0, BA2=1 and BA3=0. Bits A0‐A3 (EDC Hold Pattern) of this register are initialized with ’1111’. Figure 28. Mode Register 4 (MR4) Definition EDC Hold pattern / EDC13 Invert The 4‐bit EDC hold pattern is considered a background pattern transmitted on the EDC pins. The register is initialized with all ’1’s. The pattern is shifted from right to left and repeated with every clock cycle. The output timing is the same as of a READ burst. CRC bursts calculated from WRITEs or READs will replace the EDC hold pattern for the duration of those bursts, provided CRC is enabled for those bursts. With each MRS command to MR4 that changes bits A0‐A3 or A9‐A11, the EDC hold pattern will be undefined for tMRD. A3 A2 A1 A0 EDC Hold Pattern 000 0 Pattern ... 111 1 Pattern Burst Pos 3 Burst Pos 2 Burst Pos 1 Burst Pos 0 BA3 BA2 BA1 BA0 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 01 00 0 EDC 13Inv WR CRC RD CRC CRC Read Latency (CRCRL) CRC Write Latency (CRCWL) EDC Hold Pattern A6 A5 A4 CRC Write Latency (CRCWL) 00 0 7 00 1 8 01 0 9 01 1 10 10 0 11 10 1 12 11 0 13 11 1 14 A8 A7 CRC Read Latency (CRCRL) 00 0 01 1 10 2 11 3 A10 WR CRC 0On 1Off A9 RD CRC 0On 1Off A11 EDC Hold Pattern Invert for EDC1 + EDC3 0 EDC hold pattern not inverted 1EDC hold pattern inverted |
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