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S75WS256NDFBAWMB Datasheet(PDF) 162 Page - SPANSION |
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S75WS256NDFBAWMB Datasheet(HTML) 162 Page - SPANSION |
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162 / 216 page ![]() 160 S75WS256Nxx Based MCPs S75WS-N-00_A0 February 17, 2005 Ad van c e Inf o rmation 31.2 Bus Configuration Register The BCR defines how the CellularRAM device interacts with the system memory bus. Page mode operation is enabled by a bit contained in the RCR. Table 31.1 below describes the control bits in the BCR. At powerup, the BCR is set to 9D4Fh. The BCR is accessed using CRE and A[19] High. Table 31.1 Bus Configuration Register Definition Note: Burst wrap and length apply to Read operations only. A13 11 0 Latency Counter Initial Latency 32 1 WAIT Polarity 4 5 6 7 8 Output Impedance Burst Wrap (BW) (Note) 14 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 Output Impedance Full Drive (default) 1/2 Drive 1/4 Drive Reserved BCR[5] 0 0 1 1 BCR[4] 0 1 0 1 15 Burst Length (BL) (Note) Reserved Reserved 9 10 Operating Mode 0 1 WAIT Polarity Active LOW Active HIGH (default) BCR[10] Reserved 22–20 A14 A15 A[18:16] 19 18–16 Register Select Reserved A19 A[22:20] Reserved Must be set to "0" Must be set to "0" All must be set to "0" 0 1 Operating Mode Synchronous burst access mode Asynchronous access mode (default) BCR[15] 0 1 Register Select Select RCR Select BCR BCR[19] Burst Wrap (Note) Burst wraps within the burst length Burst no wrap (default) BCR[3] 0 1 Must be set to "0" Setting is ignored WAIT Configuration (WC) 12 13 BCR[12] BCR[11] Latency Counter BCR[13] 0 0 0 0 1 1 1 1 0 0 1 1 0 0 1 1 0 1 0 1 0 1 0 1 Code 0–Reserved Code 1–Reserved Code 2 Code 3 (Default) Code 4 Code 5 Code 6 Code 7–Reserved 0 1 WAIT Configuration Asserted during delay Asserted one data cycle before delay (default) BCR[8] BCR[1] BCR[0] Burst Length (Note) BCR[2] 0 0 0 1 0 1 1 1 1 0 1 1 4 words 8 words 16 words Continuous burst (default) Reserved Must be set to "0" Others |
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