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TLE8262E Datasheet(PDF) 90 Page - Infineon Technologies AG

Part # TLE8262E
Description  Universal System Basis Chip HERMES Rev. 1.0
PDF  93 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

TLE8262E Datasheet(HTML) 90 Page - Infineon Technologies AG

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Data Sheet
90
Rev. 1.0, 2009-03-31
TLE8262E
Application Information
16.3
ESD Tests
Tests for ESD robustness according to IEC61000-4-2 “gun test” (150pF, 330
Ω) have been performed. The results
and test condition is available in a test report. The values for the test are listed in Table 27 below.
Table 26
PIN in Factory Flash Mode
Pin
Level
Comment
Vs
typ. 4.5V
Voltage output from SBC. No voltage applied from
external.
Vcc1µC
5V
± 2%
To be applied from external
RO
Pull-up resistor
Can be driven from external
INT
Pull-up resistor
Can be driven from external if required
LH
High impedance
Can be driven from external if required
SDO
High impedance
Can be driven from external if required
CLK, SDI
Pull-down resistor
Can be driven from external if required
CSN
Pull-up resistor
Can be driven from external if required
TxDCAN, TxDLIN1,
TxDLIN2, TxDLIN3
Pull-up resistor
Can be driven from external if required
RxDCAN, RxDLIN1,
RxDLIN2, RxDLIN3
High impedance
Can be driven from external if required
Table 27
ESD “Gun test”
Performed Test
Result
Unit
Remarks
ESD at pin CANH, CANL,
BUSx, Vs versus GND
> 8
kV
positive pulse1)
1) ESD susceptibility “ESD GUN” contact discharge (R=330Ohm C=150pF) (DIN EN 61000-4-2) tested according LIN EMC
1.3 Test Specification and ICT EMC Evaluation of CAN Transceiver. Tested by external test house (IBEE Zwickau, EMC
Test report Nr. 06-02-09a)
ESD at pin CANH, CANL,
BUSx, Vs versus GND
< -8
kV
negative pulse



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