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MSP430F5632IPZ Datasheet(PDF) 67 Page - Texas Instruments |
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MSP430F5632IPZ Datasheet(HTML) 67 Page - Texas Instruments |
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67 / 101 page  MSP430F563x www.ti.com SLAS650A – JUNE 2010 – REVISED JULY 2010 USB-PWR (USB Power System) over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) PARAMETER TEST CONDITIONS VCC MIN TYP MAX UNIT VLAUNCH VBUS detection threshold 3.75 V VBUS USB bus voltage Normal operation 3.76 5.5 V VUSB USB LDO output voltage 3.3 ±9% V V18 Internal USB voltage(1) 1.8 V Maximum external current from VUSB IUSB_EXT USB LDO is on 12 mA terminal(2) IDET USB LDO current overload detection(3) 60 100 mA USB LDO is on, ISUSPEND Operating supply current into VBUS terminal.(4) 250 µA USB PLL disabled CBUS VBUS terminal recommended capacitance 4.7 µF CUSB VUSB terminal recommended capacitance 220 nF C18 V18 terminal recommended capacitance 220 nF Within 2%, tENABLE Settling time VUSB and V18 2 ms recommended capacitances RPUR Pullup resistance of PUR terminal 70 110 150 Ω (1) This voltage is for internal usages only. No external DC loading should be applied. (2) This represents additional current that can be supplied to the application from the VUSB terminal beyond the needs of the USB operation. (3) A current overload will be detected when the total current supplied from the USB LDO, including IUSB_EXT, exceeds this value. (4) Does not include current contribution of Rpu and Rpd as outlined in the USB specification. USB-PLL (USB Phase Locked Loop) over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) PARAMETER TEST CONDITIONS VCC MIN TYP MAX UNIT IPLL Operating supply current 7 mA fPLL PLL frequency 48 MHz fUPD PLL reference frequency 1.5 3 MHz tLOCK PLL lock time 2 ms tJitter PLL jitter 1000 ps Flash Memory over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) TEST PARAMETER MIN TYP MAX UNIT CONDITIONS DVCC(PGM/ERASE) Program and erase supply voltage 1.8 3.6 V IPGM Average supply current from DVCC during program 3 5 mA IERASE Average supply current from DVCC during erase 2 mA IMERASE, IBANK Average supply current from DVCC during mass erase or bank erase 2 mA tCPT Cumulative program time See (1) 16 ms Program/erase endurance 104 105 cycles tRetention Data retention duration TJ = 25°C 100 years tWord Word or byte program time See (2) 64 85 µs tBlock, 0 Block program time for first byte or word See (2) 49 65 µs Block program time for each additional byte or word, except for last tBlock, 1–(N–1) See (2) 37 49 µs byte or word tBlock, N Block program time for last byte or word See (2) 55 73 µs (1) The cumulative program time must not be exceeded when writing to a 128-byte flash block. This parameter applies to all programming methods: individual word/byte write and block write modes. (2) These values are hardwired into the flash controller's state machine. Copyright © 2010, Texas Instruments Incorporated Submit Documentation Feedback 67 |
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