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W25Q128FVCIP Datasheet(PDF) 85 Page - Winbond |
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W25Q128FVCIP Datasheet(HTML) 85 Page - Winbond |
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85 / 97 page ![]() W25Q128FV Publication Release Date: October 01, 2012 - 84 - Revision D 9.7 AC Electrical Characteristics (cont’d) DESCRIPTION SYMBOL ALT SPEC UNIT MIN TYP MAX /HOLD Active Hold Time relative to CLK tCHHH 5 ns /HOLD Not Active Setup Time relative to CLK tHHCH 5 ns /HOLD Not Active Hold Time relative to CLK tCHHL 5 ns /HOLD to Output Low-Z tHHQX(2) tLZ 7 ns /HOLD to Output High-Z tHLQZ(2) tHZ 12 ns Write Protect Setup Time Before /CS Low tWHSL(3) 20 ns Write Protect Hold Time After /CS High tSHWL(3) 100 ns /CS High to Power-down Mode tDP(2) 3 µs /CS High to Standby Mode without ID Read tRES1(2) 3 µs /CS High to Standby Mode with ID Read tRES2(2) 1.8 µs /CS High to next Instruction after Suspend tSUS(2) 20 µs /CS High to next Instruction after Reset tRST(2) 30 µs /RESET pin Low period to reset the device tRESET(2) 1 (5) µs Write Status Register Time tW 10 15 ms Byte Program Time (First Byte) (4) tBP1 30 50 µs Additional Byte Program Time (After First Byte) (4) tBP2 2.5 12 µs Page Program Time tPP 0.7 3 ms Sector Erase Time (4KB) tSE 100 400 ms Block Erase Time (32KB) tBE1 120 1,600 ms Block Erase Time (64KB) tBE2 150 2,000 ms Chip Erase Time tCE 40 200 s Notes: 1. Clock high + Clock low must be less than or equal to 1/fC. 2. Value guaranteed by design and/or characterization, not 100% tested in production. 3. Only applicable as a constraint for a Write Status Register instruction when SRP[1:0]=(0,1). 4. For multiple bytes after first byte within a page, tBPN = tBP1 + tBP2 * N (typical) and tBPN = tBP1 + tBP2 * N (max), where N = number of bytes programmed. 5. It is possible to reset the device with shorter tRESET (as short as a few hundred ns), a 1us minimum is recommended to ensure reliable operation. 6. Tested on sample basis and specified through design and characterization data. TA = 25° C, VCC = 3.0V, 25% driver strength. |
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