TMP89FS60 datasheet(335/410 Pages) TOSHIBA

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TMP89FS60

RA003

21.5.2 Flash memory control in MCU mode

In MCU mode, a write can be performed on the flash memory by executing a control program in RAM or

using a support program (API) provided inside BOOTROM.

21.5.2.1 How to write to the flash memory by transferring a control program to the RAM area

This section describes how to execute a control program in RAM in MCU mode. A control program to

be executed in RAM must be acquired and stored in the flash memory or it must be imported from an out-

side source through a communication pin. (The following procedure assumes that a program copy is pro-

vided inside the flash memory.)

Steps 1 through 5 and 11 shown below concern the control by a program in the flash memory, and other

steps concern the control by a program transferred to RAM. The following procedure is linked with a pro-

gram example to be described later.

1. Set the interrupt master enable flag to "disable (DI)" (IMF

← "0").

2. Transfer the write control program to RAM.

3. Establish the nonmaskable interrupt vector in the RAM area.

4. After setting both SYSCR3<RAREA> and SYSCR3<RVCTR> to "1", set "0xD4" on FLSCR4.

Then allocate RAM to the code area, and switch the vector area to the RAM area.

5. Invoke the erase processing program in the RAM area by generating a CALL instruction.

6. Set FLSCR1<FLSMD> to "0y101", and specify the area to be erased by making the appropriate

FLSCR1<FAREA> setting. (Make the appropriate FLSCR1<ROMSEL> setting, as necessary.)

Then set "0xD5" on FLSCR2<CR1EN>.

7. Execute the erase command sequence.

8. Perform a read on the same address in the flash memory twice consecutively. (Repeat this step

until the read values become the same.)

9. After setting FLSCR1<FLSMD> to "0y010" and FLSCR1<FAREA> to "0y00", set "0xD5" on

FLSCR2<CR1EN>. (This disables the execution of the command sequence and returns FAREA

to the initial state of mapping.)

10. Generate the RET instruction to return to the flash memory.

11. Invoke the write program in the RAM area by generating a CALL instruction.

12. Set FLSCR1<FLSMD> to "0y101", and make the appropriate FLSCR1<FAREA> setting to

specify the area (area erased by performing step 7 above) on which a write is to be performed.

(Make the appropriate FLSCR1<ROMSEL> setting, as necessary.) Then set "0xD5" on

FLSCR2<CR1EN>.

13. Execute the write command sequence.

14. Perform a read on the same address in the flash memory twice consecutively.

(Repeat this step until the read values become the same.)

15. After setting FLSCR1<FLSMD> to "0y010" and FLSCR1<FAREA> to "0y00", set "0xD5" on

FLSCR2<CR1EN>. (This disables the execution of the command sequence and returns FAREA

to the initial state of mapping.)

16. Generate the RET instruction to return to the flash memory.

Note 1: Before writing data to the flash memory from the RAM area in MCU mode, the vector area must be

switched to the RAM area by using SYSCR3<RVCTR>, data must be written to the vector addresses

(INTUNDEF, INTSWI: 0x01F8 to 0x01F9, INTWDT: 0x01FC to 0x01FD) that correspond to non-

maskable interrupts, and the interrupt subroutine (RAM area) must be defined. This allows you to trap

the errors that may occur due to an unexpected nonmaskable interrupt during a write. If

SYSCR3<RVCTR> is set in the flash memory area and if an unexpected interrupt occurs during a

write, a malfunction may occur because the vector area in the flash memory cannot be read properly.

Note 2: Before using a certain interrupt in MCU mode, the vector address corresponding to that interrupt and

the interrupt service routine must be established inside the RAM area. In this case, the nonmaskable

interrupt setting must be made, as explained in Note 1.

TMP89FS60 Datasheet(PDF) 335 Page - Toshiba Semiconductor

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