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TMP89FS60 Datasheet(PDF) 336 Page - Toshiba Semiconductor

Part # TMP89FS60
Description  8 Bit Microcontroller
PDF  410 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TMP89FS60 Datasheet(HTML) 336 Page - Toshiba Semiconductor

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Page 322
21. Flash Memory
21.4 Toggle Bit (D6)
TMP89FS60
RA003
Note 3: Before jumping from the flash memory to the RAM area, RAM must be allocated to the code area by
making the appropriate SYSCR3<RAREA> setting (setting made in step 4 in the procedure described
on the previous page).
Example: Case in which a program is transferred to RAM, a sector erase is performed on 0xE000 through 0xEFFF in
the code area, and then 0x3F data is written to 0xE500.
cRAMStartAdd
equ 0x0200
; RAM start address
main section code abs = 0x1000
DI
; Disable interrupts (step 1)
; #### Transfer the program to RAM #### (step 2)
LD
HL,cRAMStartAdd
LD
IX,sRAMprogStart
sRAMLOOP:
LD
A,(IX)
; Transfer the program from sRAMprogStart to
LD
(HL),A
; sRAMprogEnd to cRAMStartAdd.
INC
HL
INC
IX
CMP
IX,sRAMprogEnd
JNZ,sRAMLOOP
; #### Set a nonmaskable interrupt vector inside the RAM area #### (step 3)
LD
HL,0x01FC
; Set INTUNDEF and INTSWI interrupt vectors
LDW
(HL),sINTSWI - sRAMprogStart + cRAMStartAdd
LD
HL,0x01F8
; Set INTWDT interrupt vector
LDW
(HL),sINTWDT - sRAMprogStart + cRAMStartAdd
; #### Allocate RAM to the code area. Switch the vector area to RAM #### (step 4)
LD
(SYSCR3),0x06
; Set RAREA and RVCTR to "1"
LD
(SYSCR4),0xD4
; Enable Code
; #### Sector erase and write process ####
LD
HL,0xF555
; Variable for command sequence
LD
DE,0xFAAA
; Variable for command sequence
; Sector erase process (step 5)
LD
C,0x00
; Set upper addresses
LD
IX,0xE000
; Set middle and lower addresses
CALL
sRAMStartAdd
; Perform a sector erase (0xE000)
; Write process (step 11)
LD
C,0x00
; Set upper addresses
LD
IX,0xE500
; Set middle and lower addresses
LD
B,0x3F
; Data to be written
CALL
sByteProgram - sRAMprogStart + cRAMStartAdd
; Write process (0xE500)
; #### Execute the next main program ####
:
:
; Execute the main program
J
XXXXX
; #### Program to be executed in RAM ####
sRAMprogStart:
sSectorErase:
CALL
sAddConv - sRAMprogStart + cRAMStartAdd
; Address conversion process
; Sector erase process (step 7)
LD
(HL),E
; 1st Bus Write Cycle (note 1)
LD
(DE),L
; 2nd Bus Write Cycle (note 1)
LD
(HL),0x80
; 3rd Bus Write Cycle (note 1)
LD
(HL),E
; 4th Bus Write Cycle (note 1)
LD
(DE),L
; 5th Bus Write Cycle (note 1)
LD
(IX),0x30
; 6th Bus Write Cycle (note 1)
JsRAMopEnd
; Write process (step 13)
sByteProgram
CALL
sAddConv - sRAMprogStart + cRAMStartAdd
; Address conversion process
LD
(HL),E
; 1st Bus Write Cycle (note 1)
LD
(DE),L
; 2nd Bus Write Cycle (note 1)
LD
(HL),0xA0
; 3rd Bus Write Cycle (Note 1)
LD
(IX),B
; 4th Bus Write Cycle (note 1)
; End process
sRAMopEnd:
NOP
; (note 2)
NOP
; (note 2)
NOP
; (note 2)



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