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S75WS256NDFBAWMB Datasheet(PDF) 147 Page - SPANSION

Part # S75WS256NDFBAWMB
Description  Stacked Multi-Chip Product (MCP)
PDF  216 Pages
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S75WS256NDFBAWMB Datasheet(HTML) 147 Page - SPANSION

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February 17, 2005 S75WS-N-00_A0
S75WS256Nxx Based MCPs
145
Advance
Information
Note: The CLK and ADV# inputs can be tied to VSS if the device is always operating in asynchronous or page mode.
Wait will be asserted but should be ignored during asynchronous and page mode operations.
Table 27.1 Signal Descriptions
Symbol
Type
Description
128M: A[22:0]
64M: A[21:0]
32M: A[20:0]
Input
Address Inputs: Inputs for addresses during Read and Write operations. Addresses are
internally latched during Read and Write cycles. The address lines are also used to define
the value to be loaded into the BCR or the RCR.
CLK
Input
Clock: Synchronizes the memory to the system operating frequency during synchronous
operations. When configured for synchronous operation, the address is latched on the first
rising CLK edge when ADV# is active. CLK is static (High or Low) during asynchronous
access Read and Write operations and during Page Read Access operations.
ADV#
Input
Address Valid: Indicates that a valid address is present on the address inputs. Addresses
can be latched on the rising edge of ADV# during asynchronous Read and Write operations.
ADV# can be held Low during asynchronous Read and Write operations.
CRE
Input
Configuration Register Enable: When CRE is High, Write operations load the RCR or BCR.
CE#
Input
Chip Enable: Activates the device when Low. When CE# is High, the device is disabled and
goes into standby or deep power-down mode.
OE#
Input
Output Enable: Enables the output buffers when Low. When OE# is High, the output buffers
are disabled.
WE#
Input
Write Enable: Determines if a given cycle is a Write cycle. If WE# is Low, the cycle is a Write
to either a configuration register or to the memory array.
LB#
Input
Lower Byte Enable. DQ[7:0]
UB#
Input
Upper Byte Enable. DQ[15:8]
DQ[15:0]
Input/
Output
Data Inputs/Outputs.
Wait
Output
Wait: Provides data-valid feedback during burst Read and Write operations. The signal is
gated by CE#. Wait is used to arbitrate collisions between refresh and Read/Write
operations. Wait is asserted when a burst crosses a row boundary. Wait is also used to mask
the delay associated with opening a new internal page. Wait is asserted and should be
ignored during asynchronous and page mode operations. Wait is High-Z when CE# is High.
VCC
Supply
Device Power Supply: (1.7V–1.95V) Power supply for device core operation.
VCCQ
Supply
I/O Power Supply: (1.7V–1.95V) Power supply for input/output buffers.
VSS
Supply
VSS must be connected to ground.
VSSQSupply
VSSQ must be connected to ground.



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