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R5F10WMDA Datasheet(PDF) 68 Page - Renesas Technology Corp

Part # R5F10WMDA
Description  Ultra-low power consumption technology
PDF  126 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

R5F10WMDA Datasheet(HTML) 68 Page - Renesas Technology Corp

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RL78/L13
2. ELECTRICAL SPECIFICATIONS (TA =
−40 to +85°C)
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
Page 68 of 123
2.8 RAM Data Retention Characteristics
(TA =
−40 to +85°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Data retention supply voltage
VDDDR
1.46Note
5.5
V
Note
This depends on the POR detection voltage. For a falling voltage, data in RAM are retained until the voltage
reaches the level that triggers a POR reset but not once it reaches the level at which a POR reset is generated.
Caution
Data in RAM are not retained if the CPU operates outside the specified operating voltage range.
Therefore, place the CPU in STOP mode before the operating voltage drops below the specified range.
VDD
STOP instruction execution
Standby release signal
(interrupt request)
STOP mode
RAM data retention mode
VDDDR
Operation mode
2.9 Flash Memory Programming Characteristics
(TA =
−40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
System clock frequency
fCLK
1.8 V
≤ VDD ≤ 5.5 V
1
24
MHz
Number of code flash rewritesNotes 1, 2, 3 Cerwr
Retained for 20 years
TA = 85
°C
1,000
Times
Number of data flash rewritesNotes 1, 2, 3
Retained for 1 year
TA = 25
°C
1,000,000
Retained for 5 years
TA = 85
°C
100,000
Retained for 20 years
TA = 85
°C
10,000
Notes 1.
1 erase + 1 write after the erase is regarded as 1 rewrite. The retaining years are until next rewrite after the
rewrite.
2.
When using flash memory programmer and Renesas Electronics self programming library
3.
This characteristic indicates the flash memory characteristic and based on Renesas Electronics reliability test.
Remark
When updating data multiple times, use the flash memory as one for updating data.
2.10 Dedicated Flash Memory Programmer Communication (UART)
(TA =
−40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Transfer rate
During serial programming
115,200
1,000,000
bps
<R>
<R>
<R>



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