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R5F10WMDA Datasheet(PDF) 69 Page - Renesas Technology Corp

Part # R5F10WMDA
Description  Ultra-low power consumption technology
PDF  126 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

R5F10WMDA Datasheet(HTML) 69 Page - Renesas Technology Corp

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RL78/L13
2. ELECTRICAL SPECIFICATIONS (TA =
−40 to +85°C)
R01DS0168EJ0210 Rev.2.10
Aug 12, 2016
Page 69 of 123
2.11 Timing Specifications for Switching Flash Memory Programming Modes
(TA =
−40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Time to complete the
communication for the initial setting
after the external reset is released
tSUINIT
POR and LVD reset must be released before
the external reset is released.
100
ms
Time to release the external reset
after the TOOL0 pin is set to the
low level
tSU
POR and LVD reset must be released before
the external reset is released.
10
μs
Time to hold the TOOL0 pin at the
low level after the external reset is
released
(excluding the processing time of
the firmware to control the flash
memory)
tHD
POR and LVD reset must be released before
the external reset is released.
1
ms
RESET
TOOL0
<1>
<2>
<3>
tSUINIT
723
s + tHD
processing
time
tSU
<4>
00H reception
(TOOLRxD, TOOLTxD mode)
<1> The low level is input to the TOOL0 pin.
<2> The external reset is released (POR and LVD reset must be released before the external
reset is released.).
<3> The TOOL0 pin is set to the high level.
<4> Setting of the flash memory programming mode by UART reception and completion the
baud rate setting.
Remark
tSUINIT: Communication for the initial setting must be completed within 100 ms after the external reset is released
during this period.
tSU:
Time to release the external reset after the TOOL0 pin is set to the low level
tHD:
Time to hold the TOOL0 pin at the low level after the external reset is released (excluding the processing
time of the firmware to control the flash memory)



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