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STM32U375CE Datasheet(PDF) 134 Page - STMicroelectronics |
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STM32U375CE Datasheet(HTML) 134 Page - STMicroelectronics |
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134 / 222 page ![]() Symbol Parameter Conditions Min Typ Max Unit ΔVDD(HSI48)(1) HSI48 oscillator frequency drift with VDD(4) 3.0 V ≤ VDD ≤ 3.6 V % - 0.025 0.05 1.58 V ≤ VDD ≤ 3.6 V - 0.05 0.1 NT jitter(1) Next transition jitter Accumulated jitter on 28 cycles(5) - - ± 0.15 - ns PT jitter(1) Paired transition jitter Accumulated jitter on 56 cycles(5) - - ± 0.25 - tsu(HSI48)(1) HSI48 oscillator startup time - - 2.5 6 μs IDD(HSI48)(1) HSI48 oscillator power consumption - - 350 400 μA 1. Specified by design. Not tested in production. 2. Evaluated by characterization. Not tested in production. 3. ΔfHSI = ACCHSI48_REL + ΔVDD. 4. These values are obtained with one of the following formulas: (Freq(3.6 V) - Freq(3.0 V)) / Freq(3.0 V) or (Freq(3.6 V) Freq(1.58 V)) / freq(1.58 V). 5. Jitter measurements are performed without the clock source activated in parallel. Figure 35. HSI48 frequency versus temperature -3 -2.5 -2 -1.5 -1 -0.5 0 0.5 1 1.5 2 -60 -40 -20 0 20 40 60 80 100 120 Temperature ( C) Average Min Max ° Low-speed internal (LSI) RC oscillator Table 78. LSI oscillator characteristics Symbol Parameter Conditions Min Typ Max Unit fLSI LSI frequency VDD = 3.0 V, TJ = 30 °C, LSIPREDIV = 0 31.4 32.0 32.6 kHz VDD = 3.0 V, TJ = 30 °C, LSIPREDIV = 1 0.245 0.25 0.255 1.71 V ≤ VDD ≤ 3.6, TJ = –40 to 110 °C LSIPREDIV = 0(1) 30.4 32.0 33.6 DuCy(LSI) LSI duty cycle LSIPREDIV = 1 - 50 - % tSU(LSI)(2) LSI oscillator startup time - - 230 260 μs tSTAB(LSI)(2) LSI oscillator stabilization time 5% of final frequency - 230 260 IDD(LSI)(2) LSI oscillator power consumption LSIPREDIV = 0 - 140 255 nA LSIPREDIV = 1 - 130 240 STM32U375xx Electrical characteristics DS14861 - Rev 2 page 134/222 |
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