STM32U375CE datasheet(135/222 Pages) STMICROELECTRONICS

135 / 222 page

1. Evaluated by characterization, not tested in production, unless otherwise specified.

2. Specified by design, not tested in production.

5.3.10

Flash memory characteristics

Table 79. Flash memory characteristics

Specified by design and not tested in production.

Symbol

Parameter

Conditions

Typ

Max(1)

Unit

tprog

‑bit programming time

Normal mode

72.8

80.8

µs

Burst mode

42.2

46.8

tprog_page

One 4

‑Kbyte page programming time

fAHB = 96 MHz, normal mode

37.2

41.3

fAHB = 96 MHz, burst mode

21.6

24.0

tprog_bank

One 512

‑Kbyte bank programming time

fAHB = 96 MHz, normal mode

4767.3

5291.7

fAHB = 96 MHz, burst mode

2764.9

3069

tERASE

One 4

‑Kbyte page erase time

10 k endurance cycles

11.8

13.1

tME

Mass erase time (one bank)

10 k endurance cycles

11.9

13.2

Mass erase time (two banks)

23.9

26.5

IDD(2)

Average consumption from VDD

Write mode

1.4

Erase mode

1.7

Maximum current (peak)

Write mode

4.0

Erase mode

6.4

1. Evaluated by characterization after cycling. Not tested in production.

2. Evaluated by characterization. Not tested in production.

Table 80. Flash memory endurance and data retention

Symbol

Parameter

Conditions

Min(1)

Unit

NEND

Endurance

Whole bank

TA = –40 to 105 °C

Kcycle

tRET

Data retention

TA = 85 °C after 1 Kcycle(2)

Year

TA = 105 °C after 1 Kcycle(2)

TA = 55 °C after 10 Kcycles(2)

TA = 85 °C after 10 Kcycles(2)

TA = 105 °C after 10 Kcycles(2)

1. Evaluated by characterization. Not tested in production.

2. Cycling performed over the whole temperature range.

5.3.11

EMC characteristics

Susceptibility tests are performed on a sample basis during device characterization.

Functional EMS (electromagnetic susceptibility)

While a simple application is executed on the device (toggling two LEDs through the I/O ports), the device is

stressed by two electromagnetic events until a failure occurs. The failure is indicated by the LEDs as follows:

•

Electrostatic discharge (ESD) (positive and negative): applied to all device pins until a functional

disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.

•

FTB (fast transient voltage burst) (positive and negative): applied to VDD and VSS pins through a 100 pF

capacitor, until a functional disturbance occurs. This test is compliant with the IEC 61000-4-4 standard.

STM32U375xx

Electrical characteristics

DS14861 - Rev 2

page 135/222

STM32U375CE Datasheet(PDF) 135 Page - STMicroelectronics

STM32U375CE Datasheet(HTML) 135 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

Datasheet Download

Link URL