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R5F72115D160FPV Datasheet(PDF) 27 Page - Renesas Technology Corp |
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R5F72115D160FPV Datasheet(HTML) 27 Page - Renesas Technology Corp |
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27 / 1228 page ![]() Section 1 Overview Rev. 2.00 May. 08, 2008 Page 3 of 1200 REJ09B0344-0200 Items Specification ROM cache • Instruction/data separation system • Instruction prefetch cache: Full/set associative • Instruction prefetch miss cache: Full/set associative • Data cache: Full/set associative • Line size: 16 bytes • Hardware prefetch function (continuous/branch prefetch) Interrupt controller (INTC) • Nine external interrupt pins (NMI and IRQ7 to IRQ0) • On-chip peripheral interrupts: Priority level set for each module • 16 priority levels available • Register bank enabling fast register saving and restoring in interrupt processing Bus state controller (BSC) • Address space divided into eight areas (0 to 7), each a maximum of 64 Mbytes • External bus: 8 or 16 bits • The following features settable for each area independently ⎯ Supports both big endian and little endian for data access ⎯ Bus size (8 or 16 bits): Available sizes depend on the area. ⎯ Number of access wait cycles (different wait cycles can be specified for read and write access cycles in some areas) ⎯ Idle wait cycle insertion (between same area access cycles or different area access cycles) ⎯ Specifying the memory to be connected to each area enables direct connection to SRAM, SRAM with byte selection, SDRAM, and burst ROM (clocked synchronous or asynchronous). The address/data multiplexed I/O (MPX) interface is also available. ⎯ Outputs a chip select signal ( CS0 to CS7) according to the target area ( CS assert or negate timing can be selected by software) • SDRAM refresh Auto refresh or self refresh mode selectable • SDRAM burst access |
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