ECE1200 datasheet(62/87 Pages) MICROCHIP

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ECE1200

DS00003093C Draft-page 62

 2018-2021 Microchip Technology Inc.

8.2.4

ESPI PIN TYPE DC ELECTRICAL CHARACTERISTICS

The DC specifications for eSPI pins are found in the Intel eSPI Interface Base Specification. See Section 5.2, "Refer-

ences," on page 25 for the eSPI document references.

8.2.5

DIO PIN TYPE DC ELECTRICAL CHARACTERISTICS

The specifications for the DIO Digital 3.3V I/O pins are listed here.

Note 8-2

The Input Leakage specification applies both to inputs and to hi-Z outputs.

8.2.5.1

Backdrive Tolerance

Only the SUSCLK input is specified as Backdrive Tolerant, and its characteristic is given below.

8.2.6

THERMAL CHARACTERISTICS

TABLE 8-6:

DIO DC ELECTRICAL CHARACTERISTICS

Parameter

Symbol

Conditions

MIN

TYP

MAX

Units

Notes

Input High Voltage

VIHI

2.0

Input Low Voltage

VILI

0.8

Input Leakage Current

IIH

+/- 10

Note 8-2

Schmitt Hysteresis

VHYS

400

Output High Voltage

VOH

IOH = -8mA

2.4

Output Low Voltage

VOL

IOL = 8mA

0.4

Input Pin Capacitance

CIN

TABLE 8-7:

SUSCLK BACKDRIVE CHARACTERISTIC

(TA = 0oC to +85oC)

Parameter

Symbol

MIN

TYP

MAX

Units

Comments

Input Leakage

IIL

-2

+12.3

µA

VIN=3.47V, and all VTR=0V

Note:

These values are PRELIMINARY, pending characterization.

TABLE 8-8:

THERMAL OPERATING CONDITIONS

Rating

Symbol

Min.

Typical

Max.

Unit

Industrial Temperature Device

Operating Junction Temperature Range

—

+125

°C

Operating Ambient Temperature Range - Industrial

-40

—

+85

°C

Internal Chip Power Dissipation

(using VTR = VTR_CORE_18 pin):

PINT = VTR x IVTR from Table 8-10 and Table 8-3

(e.g., 1.89V x 0.9mA = 1.7mW)

PINT + PI/O

I/O Pin Power Dissipation

(each pin using its VTR level VTR_33 or VTR_18):

I/O = Sum (({VTR– VOH} x IOH) + Sum (VOL x IOL))

Maximum Allowed Power Dissipation

(considering ambient air only)

PDMAX

(TJ – TA)/

JA

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