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TMS320F2810PBKA Datasheet(PDF) 64 Page - Texas Instruments |
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TMS320F2810PBKA Datasheet(HTML) 64 Page - Texas Instruments |
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64 / 173 page ![]() 64 TMS320F2810, TMS320F2811, TMS320F2812 SPRS174U – APRIL 2001 – REVISED JULY 2019 www.ti.com Submit Documentation Feedback Product Folder Links: TMS320F2810 TMS320F2811 TMS320F2812 Specifications Copyright © 2001–2019, Texas Instruments Incorporated (1) During inactive cycles, the XINTF address bus will always hold the last address put out on the bus. This includes alignment cycles. (2) TW = trail period, write access. See Table 5-26. 5.12.5.12 External Interface Ready-on-Write Timing With One External Wait State Table 5-35. External Memory Interface Write Switching Characteristics (Ready-on-Write, 1 Wait State) PARAMETER MIN MAX UNIT td(XCOH-XZCSL) Delay time, XCLKOUT high to zone chip-select active-low 1 ns td(XCOHL-XZCSH) Delay time, XCLKOUT high or low to zone chip-select inactive-high –2 3 ns td(XCOH-XA) Delay time, XCLKOUT high to address valid 2 ns td(XCOHL-XWEL) Delay time, XCLKOUT high/low to XWE low 2 ns td(XCOHL-XWEH) Delay time, XCLKOUT high/low to XWE high 2 ns td(XCOH-XRNWL) Delay time, XCLKOUT high to XR/W low 1 ns td(XCOHL-XRNWH) Delay time, XCLKOUT high/low to XR/W high –2 1 ns ten(XD)XWEL Enable time, data bus driven from XWE low 0 ns td(XWEL-XD) Delay time, data valid after XWE active-low 4 ns th(XA)XZCSH Hold time, address valid after zone chip-select inactive-high (1) ns th(XD)XWE Hold time, write data valid after XWE inactive-high TW – 2(2) ns tdis(XD)XRNW Maximum time for DSP to release the data bus after XR/W inactive-high 4 ns (1) The first XREADY (synchronous) sample occurs with respect to E in Figure 5-31: E = (XWRLEAD + XWRACTIVE) tc(XTIM) When first sampled, if XREADY (synchronous) is found to be high, then the access will complete. If XREADY (synchronous) is found to be low, it will be sampled again each tc(XTIM) until it is found to be high. For each sample, setup time from the beginning of the access can be calculated as: D = (XWRLEAD + XWRACTIVE + n – 1) tc(XTIM) – tsu(XRDYsynchL)XCOHL where n is the sample number (n = 1, 2, 3, and so forth). Table 5-36. Synchronous XREADY Timing Requirements (Ready-on-Write, 1 Wait State)(1) MIN MAX UNIT tsu(XRDYsynchL)XCOHL Setup time, XREADY (synchronous) low before XCLKOUT high/low 15 ns th(XRDYsynchL) Hold time, XREADY (synchronous) low 12 ns te(XRDYsynchH) Earliest time XREADY (synchronous) can go high before the sampling XCLKOUT edge 3 ns tsu(XRDYsynchH)XCOHL Setup time, XREADY (synchronous) high before XCLKOUT high/low 15 ns th(XRDYsynchH)XZCSH Hold time, XREADY (synchronous) held high after zone chip-select high 0 ns (1) The first XREADY (synchronous) sample occurs with respect to E in Figure 5-32: E = (XWRLEAD + XWRACTIVE – 2) tc(XTIM) When first sampled, if XREADY (asynchronous) is found to be high, then the access will complete. If XREADY (asynchronous) is found to be low, it will be sampled again each tc(XTIM) until it is found to be high. For each sample, setup time from the beginning of the access can be calculated as: D = (XWRLEAD + XWRACTIVE – 3 + n) tc(XTIM) – tsu(XRDYasynchL)XCOHL where n is the sample number (n = 1, 2, 3, and so forth). Table 5-37. Asynchronous XREADY Timing Requirements (Ready-on-Write, 1 Wait State)(1) MIN MAX UNIT tsu(XRDYasynchL)XCOHL Setup time, XREADY (asynchronous) low before XCLKOUT high/low 11 ns th(XRDYasynchL) Hold time, XREADY (asynchronous) low 8 ns te(XRDYasynchH) Earliest time XREADY (asynchronous) can go high before the sampling XCLKOUT edge 3 ns tsu(XRDYasynchH)XCOHL Setup time, XREADY (asynchronous) high before XCLKOUT high/low 11 ns th(XRDYasynchH)XZCSH Hold time, XREADY (asynchronous) held high after zone chip-select high 0 ns |
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