TMS320F2810PBKA datasheet(86/173 Pages) TI

86 / 173 page

TMS320F2810, TMS320F2811, TMS320F2812

SPRS174U – APRIL 2001 – REVISED JULY 2019

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Specifications

5.12.8 Flash Timing

(1)

Write/erase operations outside of the temperature ranges indicated are not specified and may affect the endurance numbers.

(2)

The Write/Erase cycle numbers of 20000 (MIN) and 50000 (TYP) are applicable only for silicon revision G. For older silicon revisions,

the Write/Erase cycle numbers of 100 (MIN) and 1000 (TYP) are applicable.

Table 5-59. Flash Endurance for A and S Temperature Material(1)

ERASE/PROGRAM

TEMPERATURE

MIN

TYP

MAX

UNIT

Flash endurance for the array (Write/Erase cycles)

0°C to 85°C (ambient)

20000(2)

50000(2)

cycles

NOTP

OTP endurance for the array (Write cycles)

0°C to 85°C (ambient)

write

(1)

Write/erase operations outside of the temperature ranges indicated are not specified and may affect the endurance numbers.

(2)

The Write/Erase cycle numbers of 20000 (MIN) and 50000 (TYP) are applicable only for silicon revision G. For older silicon revisions,

the Write/Erase cycle numbers of 100 (MIN) and 1000 (TYP) are applicable.

Table 5-60. Flash Endurance for Q Temperature Material(1)

ERASE/PROGRAM

TEMPERATURE

MIN

TYP

MAX

UNIT

Flash endurance for the array (Write/Erase cycles)

–40°C to 125°C (ambient)

20000(2)

50000(2)

cycles

NOTP

OTP endurance for the array (Write cycles)

–40°C to 125°C (ambient)

write

(1)

Typical parameters as seen at room temperature including function call overhead, with all peripherals off. It is important to maintain a

stable power supply during the entire flash programming process. It is conceivable that device current consumption during flash

programming could be higher than normal operating conditions. The power supply used should ensure VMIN on the supply rails at all

times, as specified in the Recommended Operating Conditions of the data sheet. Any brown-out or interruption to power during

erasing/programming could potentially corrupt the password locations and lock the device permanently. Powering a target board (during

flash programming) through the USB port is not recommended, as the port may be unable to respond to the power demands placed

during the programming process.

(2)

Flash API v1.00 is useable on rev. C silicon only.

(3)

The on-chip flash memory is in an erased state when the device is shipped from TI. As such, erasing the flash memory is not required

prior to programming, when programming the device for the first time. However, the erase operation is needed on all subsequent

programming operations.

Table 5-61. Flash Parameters at 150-MHz SYSCLKOUT(1)

PARAMETER

MIN

TYP

MAX

UNIT

Program Time

16-Bit Word

Using Flash API v1(2)

µs

Using Flash API v2.10

8K Sector

Using Flash API v1(2)

170

Using Flash API v2.10

250

16K Sector

Using Flash API v1(2)

320

Using Flash API v2.10

500

Erase Time(3)

8K Sector

16K Sector

IDD3VFLP

VDD3VFL current consumption during the Erase/Program cycle

Erase

Program

IDDP

VDD current consumption during Erase/Program cycle

140

IDDIOP

VDDIO current consumption during Erase/Program cycle

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