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26HS01GTAM03 Datasheet(PDF) 65 Page - Infineon Technologies AG

Part # 26HS01GTAM03
Description  256Mb/512Mb/1Gb SEMPER??Flash HYPERBUS??interface, 1.8V/3.0V
PDF  166 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

26HS01GTAM03 Datasheet(HTML) 65 Page - Infineon Technologies AG

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Datasheet
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002-12337 Rev. *Y
2022-01-18
256Mb/512Mb/1Gb SEMPER™ Flash
HYPERBUS™ interface, 1.8V/3.0V
Features
4.10
Program
There are program transactions for programming data into the device. These program transactions can use any
of these two protocols:
• HYPERBUS™ interface with DDR - Program Registers, the Memory Array, SSR, Persistent Protection Bits, Dynamic
Protection Bits, Clear ECC Status and Clear PPB Lock bit.
• Legacy (x1) SPI interface with SDR - Program the Memory Array, SSR, and Persistent Protection Bits.
4.10.1
HYPERBUS™
4.10.1.1
Word programming
Word programming is used to program a single word or a group of words anywhere in the flash memory arrays.
The minimum Word Programming command sequence requires four command write transactions. The program
command sequence is initiated by issuing two unlock command write transactions (transactions one and two),
followed by the program set-up command (transaction three). The program address and data are written next
(transaction four), which in turn initiates the Embedded Programming algorithm. The system is not required to
provide further controls or timing. The device automatically generates the program pulses and verifies the
programmed cell margin internally. When the Embedded Programming algorithm is complete, the EAC then
returns to its Standby State.
The four transaction Word Programming command sequence described earlier is used to program a single
(16-bit) word (two bytes). Multiple sequential words can be programmed with the Word Programming sequence
by using the burst write capability. The unlock and program command sequence is identical to a single Word
Programming sequence but during the data / address transaction multiple sequential data values are loaded
during a single assertion of CS#. The data presented is programmed into sequential addresses starting with the
target address identified in the Command-Address phase of the burst write transaction. A maximum of 256 words
(512-Byte) can be programmed as long as an aligned 256 word (512-Byte) address boundary is not crossed.
The system can determine the status of the program operation by reading the Status Register (see Error types
and reporting - HYPERBUS™ on page 80).
Any commands other than Program Suspend and Status Register Read written to the device during the
Embedded Program algorithm are ignored.
Note that a Hardware Reset (RESET# = VIL) or power loss immediately terminates the programming operation and
returns the device to Read mode after tRPH time. The termination may leave the area being programmed in an
intermediate state with invalid or unstable data values. Once the device has completed the Hardware Reset
operation, the program command sequence may be reinitiated with the same data to complete the
programming operation, to ensure the data is fully programmed. However, to ensure the best data integrity, the
sector in which the program operation was terminated must be erased and re-programed.
The Word Programming command may also be used when the SSR ASO is entered.
A modified version of the Word Programming command, without unlock write cycles, is used for programming
when entered into the Advanced Sector Protection, Password, and PPB ASOs. The same command is used to
change volatile bits when entered into the PPB Lock, and DYB ASOs.



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