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26HS01GTAM03 Datasheet(PDF) 73 Page - Infineon Technologies AG

Part # 26HS01GTAM03
Description  256Mb/512Mb/1Gb SEMPER??Flash HYPERBUS??interface, 1.8V/3.0V
PDF  166 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

26HS01GTAM03 Datasheet(HTML) 73 Page - Infineon Technologies AG

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Datasheet
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002-12337 Rev. *Y
2022-01-18
256Mb/512Mb/1Gb SEMPER™ Flash
HYPERBUS™ interface, 1.8V/3.0V
Features
Figure 37
Sector erase operation
4.11.2.1
Erase register transactions
The Erase Register (ERNC12_3_0) transactions provide a way to erase any Nonvolatile Device Register. The trans-
actions include unlock cycles.
The ERSERR bit in STRV[5] may be checked to determine if any error occurred during the operation.
4.11.2.2
Erase persistent protection bits (PPB)
The Erase Persistent Protect Bits (ERNPPB_2_1) transaction erases all PPB bits.
The ERSERR bit in STRV[5] may be checked to determine if any error occurred during the operation. Erase PPB
bit transaction will abort when trying to erase the PPB bits protected by PPBLCK (PPLV[0]) bit.
Write Unlock Cycles:
Address 555h, Data AAh
Address 2AAh, Data 55h
Write Sector Erase Cycles:
Address 555h, Data 80h
Address 555h, Data AAh
Address 2AAh, Data 55h
Sector Address, Data 30h
FAIL. Write reset command
to return to reading array.
PASS. Device returns
to reading array.
Perform Write Operation
Status Algorithm
Unlock Cycle 1
Unlock Cycle 2
Yes
Yes
No
No
Done?
Erase Error?
Command Cycle 1
Command Cycle 2
Command Cycle 3
Specify first sector for erasure
Error condition (Exceeded Timing Limits)
Status may be obtained by Status Register Polling.



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