MC9S08DN60F1CLF datasheet(47/356 Pages) FREESCALE

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Chapter 4 Memory

MC9S08DN60 Series Data Sheet, Rev 3

Freescale Semiconductor

4.4

RAM

The MC9S08DN60 Series includes static RAM. The locations in RAM below 0x0100 can be accessed

using the more efﬁcient direct addressing mode, and any single bit in this area can be accessed with the bit

manipulation instructions (BCLR, BSET, BRCLR, and BRSET). Locating the most frequently accessed

program variables in this area of RAM is preferred.

The RAM retains data while the MCU is in low-power wait, stop2, or stop3 mode. At power-on the

contents of RAM are uninitialized. RAM data is unaffected by any reset if the supply voltage does not drop

below the minimum value for RAM retention (VRAM).

For compatibility with M68HC05 MCUs, the HCS08 resets the stack pointer to 0x00FF. In the

MC9S08DN60 Series, it is usually best to reinitialize the stack pointer to the top of the RAM so the direct

page RAM can be used for frequently accessed RAM variables and bit-addressable program variables.

Include the following 2-instruction sequence in your reset initialization routine (where RamLast is equated

to the highest address of the RAM in the Freescale Semiconductor equate ﬁle).

LDHX

#RamLast+1

;point one past RAM

TXS

;SP<-(H:X-1)

When security is enabled, the RAM is considered a secure memory resource and is not accessible through

BDM or code executing from non-secure memory. See Section 4.5.9, “Security”, for a detailed description

of the security feature.

4.5

Flash and EEPROM

MC9S08DN60 Series devices include Flash and EEPROM memory intended primarily for program and

data storage. In-circuit programming allows the operating program and data to be loaded into Flash and

EEPROM, respectively, after ﬁnal assembly of the application product. It is possible to program the arrays

through the single-wire background debug interface. Because no special voltages are needed for erase and

programming operations, in-application programming is also possible through other software-controlled

communication paths. For a more detailed discussion of in-circuit and in-application programming, refer

to the HCS08 Family Reference Manual, Volume I, Freescale Semiconductor document order number

HCS08RMv1.

4.5.1

Features

Features of the Flash and EEPROM memory include:

•

Array size (see Table 1-1 for exact array sizes)

•

Flash sector size: 768 bytes

•

EEPROM sector size: selectable 4-byte or 8-byte sector mapping operation

•

Single power supply program and erase

•

Command interface for fast program and erase operation

•

Up to 100,000 program/erase cycles at typical voltage and temperature

•

Flexible block protection and vector redirection

•

Security feature for Flash, EEPROM, and RAM

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