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26HS01GTAM03 Datasheet(PDF) 146 Page - Infineon Technologies AG

Part # 26HS01GTAM03
Description  256Mb/512Mb/1Gb SEMPER??Flash HYPERBUS??interface, 1.8V/3.0V
PDF  166 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

26HS01GTAM03 Datasheet(HTML) 146 Page - Infineon Technologies AG

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Datasheet
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002-12337 Rev. *Y
2022-01-18
256Mb/512Mb/1Gb SEMPER™ Flash
HYPERBUS™ interface, 1.8V/3.0V
Timing characteristics
tCSS
CS# Active Setup Time relative to CK (fCK  50MHz / fCK >
50MHz)
5/4
–
–
ns
Figure 60
tCSH0
CS# Active Hold Time (relative to CK in Mode 0)
4
–
–
tCSH3
CS# Active Hold Time (relative to CK in Mode 3)
6
–
–
Figure 60
tSU
Data Setup Time (all VCC) (fCK 50MHz / fCK > 50MHz)
5 / 2
–
–
tHD
Data Hold Time (all VCC) (fCK 50MHz / fCK > 50MHz)
5 / 2
–
–
tV
Clock Low to Output Valid
(15pF Loading, 3.0V  3.6V, 30  Output Impedance) (HL-T)
2–
6.5
Figure 61
Clock Low to Output Valid (30pF Loading) (HS-T)
2
–
8
Clock Low to Output Valid (30pF Loading) (HL-T)
2
–
9
Clock Low to Output Valid (15pF Loading) (HS-T)
2
–
6
Clock Low to Output Valid (15pF Loading) (HL-T)
2
–
8
tHO
Output Hold Time
1.5
–
–
tDIS
Output Disable Time (HS-T)
–
–
6
Output Disable Time (HL-T)
–
–
7.50
Power Up / Power Down Timing
tPU
VCC(min) to Read operation
(HL256T / HS256T)
(HL512T / HS512T)
(HL01GT / HS01GT)
––
550 / 600
450 / 500
500 / 500
µs
Figure 47
tPD
VCC(Low) time
25
–
–
Figure 48
tVR[79]
VCC / VCCQ Power Up ramp rate
1
–
–
µs/V
Figure 49
tVF
VCC / VCCQ Power Down ramp rate
30
–
–
Figure 64
Deep Power Down Mode Timing
tENTDPD[79]
Time to Enter DPD mode
–
–
3
µs
–
tEXTDPD
Time to Exit DPD mode
(HL256T / HS256T)
(HL512T / HS512T)
(HL01GT / HS01GT)
––
520 / 570
380 / 430
430 / 430
Figure 46
tCSDPD
Chip Select Pulse Width to Exit DPD
0.02
–
3
Reset Timing[74, 75]
tRS
Reset Setup - RESET# High before CS# Low
50
–
–
ns
Figure 39
tRH
Reset Pulse Hold - RESET# Low to CS# Low
(HL256T / HS256T)
(HL512T / HS512T)
(HL01GT / HS01GT)
550 / 600
450 / 500
500 / 500
––
µs
tRP
RESET# Pulse Width
200
–
–
ns
tSR
Internal Device Reset from Software Reset Transaction
(256T / 512T / 01GT)
–
–
90 / 83 / 83
µs
–
CS# Signaling Reset Timing
tCSLW
Chip Select Low
500
–
–
ns
Figure 44
tCSHG
Chip Select High
500
–
–
tRESET
Internal device reset (HL512T / HS512T / HL01GT / HS01GT)
–
–
450 / 500 /
500 / 500
µs
tSUJ
Data in Setup Time (w.r.t CS#)
50
–
–
ns
tHDJ
Data in Hold Time (w.r.t CS#)
50
–
–
Embedded Algorithm (Erase, Program and Data Integrity Check) Performance[76, 77, 78, 79]
tW
Nonvolatile Register Write Time
–
44
357.5
ms
–
tPP
256B Page Programming (4KB Sector / 256KB Sector)
–
430 / 480
2175 / 1700
µs
–
512B Page Programming (4KB Sector / 256KB Sector)
–
680 / 570
2175 / 1700
Table 129
Timing characteristics[70] (Continued)
Symbol
Parameter
Min
Typ
Max
Unit
Reference
figure



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