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MM32F103CET Datasheet(PDF) 50 Page - MindMotion Microelectronics

Part # MM32F103CET
Description  32-bit Micro controller based on ARM Cortex M3
PDF  89 Pages
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Manufacturer  MINDMOTION [MindMotion Microelectronics]
Direct Link  https://www.mindmotion.com.cn/
Logo MINDMOTION - MindMotion Microelectronics

MM32F103CET Datasheet(HTML) 50 Page - MindMotion Microelectronics

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DS_MM32F103xx_o_Ver1.13
Electrical characteristics
• Ambient operating temperature and supply voltage conditions VDD summarized in Ta-
ble 10.
Table 17. On-chip peripheral current consumption(1)
Peripheral
Typical
consumption
at 25 ◦C
Unit
Peripheral
Typical
consumption
at 25 ◦C
Unit
APB1
TIM2
0.098
mA
APB2
GPIOA
0.045
mA
TIM3
0.062
GPIOB
0.046
APB1
TIM4
0.055
mA
APB2
GPIOC
0.052
mA
SPI2
0.133
GPIOD
0.046
UART2
0.077
ADC1
0.051
UART3
0.078
ADC2
0.052
I2C1
0.132
TIM1
0.121
I2C2
0.134
SPI1
0.122
USB
0.058
UART1
0.078
CAN
0.033
1. fHCLK = 96MHz, fAPB1 = fHCLK/2, fAPB2 = fHCLK, the prescale coefficient for each device
is the default value.
5.3.6
External clock source characteristics
High-speed external user clock generated from an external source
The characteristic parameters given in the following table are measured using a high-
speed external clock source, ambient temperature and power supply voltage meet the
conditions of General operating conditions.
Table 18. High-speed external user clock characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fHSE_ext
User external clock source
frequency(1)
2
8
24
MHz
VHSEH
OSC_IN input pin high level
voltage
0.7VDD
VDD
V
VHSEL
OSC_IN input pin low level
voltage
VSS
0.3VDD
tw(HSE)
OSC_IN high or low time(1)
16
nS
tr(HSE)
tf(HSE)
OSC_IN rise or fall time(1)
20
Cin(HSE)
OSC_IN input capacitance(1)
5
pF
DuCy(HSE)
Duty cycle
45
55
%
IL
OSC_IN input leakage current
VSS ≤ VIN ≤ VDD
±1
uA
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