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MM32F103CET Datasheet(PDF) 58 Page - MindMotion Microelectronics

Part # MM32F103CET
Description  32-bit Micro controller based on ARM Cortex M3
PDF  89 Pages
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Manufacturer  MINDMOTION [MindMotion Microelectronics]
Direct Link  https://www.mindmotion.com.cn/
Logo MINDMOTION - MindMotion Microelectronics

MM32F103CET Datasheet(HTML) 58 Page - MindMotion Microelectronics

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DS_MM32F103xx_o_Ver1.13
Electrical characteristics
compliant with the IEC 1000-4-4 standard.
A device reset allows normal operations to be resumed.
The test results are given in the following table. They are based on the EMS levels and
classes defined in application note.
Table 28. EMS characteristics
Symbol
Parameter
Conditions
Level/Class
VEFT
Fast transientvoltage burst
limits to be applied through
100 pF on VDD and VSS
pinsto induce a functional
disturbance
VDD = 3.3V,TA=+25◦C,
fHCLK=48MHz.Conformingto
IEC 1000-4-4
TBD
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and pre-
qualification tests in relation with the EMC level requested for his application.
Software recommendations
The software flowchart must include the management of runaway conditions such as:
• Corrupted program counter
• Unexpected reset
• Critical Data corruption (for example control registers)
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range
of specification values. When unexpected behavior is detected, the software can be hard-
ened to prevent unrecoverable errors.
5.3.11 Absolute Maximum (Electrical Sensitivity)
Based on three different tests (ESD, LU) using specific measurement methods, the device
is stressed in order to determine its performance in terms of electrical sensitivity.
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