STWBC2-HP datasheet(81/96 Pages) STMICROELECTRONICS

81 / 96 page

Symbol

Parameter

Test condition

Min.

Typ.

Max.

Unit

VGEN_DP(DM)

DP & DM

generator

0.6 V voltage mode,

ILOAD: 0 ÷ 1 mA

0.5

0.6

0.7

3.3 V voltage mode,

ILOAD: 0 ÷ 1 mA

3.0

3.3

3.6

2.8 V voltage mode,

ILOAD: 0 ÷ 1 mA

2.6

2.8

3.0

Current Mode Boundaries(4)

175

μA

IVGEN_DP(DM)

VGEN_DP(DM) voltage

generator current capability

0.5

IDM_SINK/IDP_SINK

Sink current from USB_DM

or USB_DP pad

See STM32G071

100

144

VISINK_DP(DM)

IDP(DM)_SINK current

generator operative voltage

0.1

RLD_DP(DM)

USB_DP & USB_DM pull-

down resistance

Pull-down mode - 20 k◻ load

kΩ

TSETT_VGEN_DM(DP)

Configuration settling time

μs

1. See STM32G071 datasheet for details about NRST MCU pin.

2. LED driver bypassed, direct pin driving (5 V GPIO).

3. To be used during Q-factor measurement only.

4. For source current less than IDP_SINK min. (25 μA), the voltage on USB_DP pin is required to be no higher than VDAT_SINK

max. (150 mV). For USB_DP voltage lower than VLGC max. (2 V) the current sunk from USB_DP pin shall to not higher than

IDP_SINK max. (175 μA). Same requirements apply to USB_DM pin.

STWBC2-HP

Electrical characteristics

DS13825 - Rev 1.0

page 81/96

STWBC2-HP Datasheet(PDF) 81 Page - STMicroelectronics

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