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STM32WBA50KG Datasheet(PDF) 81 Page - STMicroelectronics |
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STM32WBA50KG Datasheet(HTML) 81 Page - STMicroelectronics |
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81 / 110 page ![]() DS14688 Rev 1 81/110 STM32WBA50KG Electrical characteristics 103 5.3.12 Flash memory characteristics tLOCK(2) PLL lock time(3) Integer mode - 25 54 μs Fractional mode - 40 65 Jitter(1) RMS cycle-to-cycle jitter Integer mode, VCO = 544 MHz - ±20 - ps Fractional mode, VCO = 544 MHz - ±70 - RMS period jitter Integer mode, VCO = 544 MHz - ±35 - Fractional mode, VCO = 544 MHz - ±45 - Long-term jitter(4) fPLL_IN = 8 MHz Integer mode, VCO = 544 MHz - ±160 - Fractional mode, VCO = 544 MHz - ±170 - IDD(PLL)(1) PLL power consumption on VDD VCO freq = 100 MHz - 370 - μA VCO freq = 200 MHz - 460 - VCO freq = 336 MHz - 710 - VCO freq = 544 MHz - 1100 - 1. Specified by design, not tested in production. 2. Evaluated by characterization, not tested in production, unless otherwise specified. 3. Lock time is the duration until PLL1RDY flag (2% of final frequency). 4. Measured on 5000 cycles. Table 54. PLL characteristics (continued) Symbol Parameter Conditions Min Typ Max Unit Table 55. Flash memory characteristics Symbol Parameter Conditions Typ Max(1) Unit tprog(2) 128-bit programming time Normal mode 118 118 µs Burst mode 48 48 tprog_page(2) One 8-Kbyte page programming time fAHB = 100 MHz, normal mode 62.0 - ms fAHB = 100 MHz, burst mode 24.9 - tprog_flash(2) 1-Mbyte programming time fAHB = 100 MHz, normal mode 7926 - fAHB = 100 MHz, burst mode 3184 - tERASE(2) One 8-Kbyte page erase time 10 k endurance cycles 1.5 2.4 100 k endurance cycles(3) 1.7 3.4 tME(2) Mass erase time 10 k endurance cycles 195 308 IDD(4) Average consumption from VDD Write mode 2.1 - mA Erase mode 1.3 - Maximum current (peak) from VDD Write mode 2.6 - Erase mode 3.0 - 1. Evaluated by characterization after cycling, not tested in production. 2. Specified by design, not tested in production, unless otherwise specified. |
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