STM32WBA50KG datasheet(82/110 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32WBA50KG

82/110

DS14688 Rev 1

5.3.13

EMC characteristics

Susceptibility tests are performed on a sample basis during device characterization.

Functional EMS (electromagnetic susceptibility)

While a simple application is executed on the device (toggling two LEDs through I/O ports),

the device is stressed by two electromagnetic events until a failure occurs. The failure is

indicated by the LEDs as follows:

•

ESD (electrostatic discharge), positive and negative: applied to all device pins until a

functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.

•

FTB (fast transient voltage burst), positive and negative: applied to VDD and VSS pins

through a 100 pF capacitor, until a functional disturbance occurs. This test is compliant

with the IEC 61000-4-4 standard.

A device reset allows normal operations to be resumed.

The test results are given in Table 56. They are based on the EMS levels and classes

defined in AN1709 “EMC design guide for STM8, STM32 and legacy MCUs”.

Designing hardened software to avoid noise problems

EMC characterization and optimization are performed at component level with a typical

application environment and simplified MCU software.

Good EMC performance is highly dependent on the user application, and the software in

particular. Therefore, it is recommended that the user applies EMC software optimization

and prequalification tests in relation with the requested EMC level.

Software recommendations

The software flow must include the management of runaway conditions, such as:

•

Corrupted program counter

•

Unexpected reset

•

Critical data corruption (control registers)

3. Erase time applies to all pages in user area in flash main memory (only 32 pages can be cycled more than 10 k times)

4. Evaluated by characterization, not tested in production, unless otherwise specified.

Table 56. EMS characteristics(1)

Symbol

Parameter

Conditions

Level/Class

VFESD

Voltage limits to apply on any I/O pin to

induce a functional disturbance

VDD = 3.3 V, TA = +25 °C, fHCLK1 = 100 MHz,

UFQFPN48 conforming to IEC 61000-4-2

VEFTB

Fast transient voltage burst limits to apply

through 100 pF on VDD and VSS pins to

induce a functional disturbance

VDD = 3.3 V, TA = +25 °C, fHCLK1 = 100 MHz,

UFQFPN48 conforming to IEC 61000-4-4

1. Evaluated by characterization, not tested in production, unless otherwise specified.

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