STM32WBA50KG datasheet(83/110 Pages) STMICROELECTRONICS

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DS14688 Rev 1

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STM32WBA50KG

Electrical characteristics

103

Prequalification trials

Most of the common failures (unexpected reset and program counter corruption) can be

reproduced by manually forcing a low state on the NRST pin or on the oscillator pins for

1 second.

To complete these trials, ESD stress can be applied directly on the device, over the range of

specified values. When an unexpected behavior is detected, the software can be hardened

to prevent the occurrence of unrecoverable errors. See AN1015 “Software techniques for

improving microcontrollers EMC performance” for more details.

Electromagnetic interference (EMI)

The electromagnetic field emitted by the device is monitored while a simple application is

executed (toggling two LEDs through the I/O ports). This emission test is compliant with the

IEC 61967-2 standard, which specifies the test board and the pin loading.

5.3.14

Electrical sensitivity characteristics

Based on three different tests (ESD, latch-up) using specific measurement methods, the

device is stressed in order to determine its performance in terms of electrical sensitivity.

Electrostatic discharge (ESD)

Electrostatic discharges (a positive then a negative pulse separated by 1 second) are

applied to the pins of each sample according to each pin combination. The sample size

depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test

conforms to the ANSI/JEDEC standard.

Table 57. EMI characteristics for fHSE = 32 MHz and fHCLK = 100 MHz(1)

Symbol

Parameter

Conditions

Monitored frequency band

Value

Unit

SEMI

Peak

level(2)

VDD = 3.6 V, TA = 25 °C,

UFQFPN48 package

compliant with IEC 61967-2

0.1 MHz to 30 MHz

dBµV

30 MHz to 130 MHz

130 MHz to 1 GHz

1 GHz to 2 GHz

Level(3)

EMI level

3.5

1. Evaluated by characterization, not tested in production.

2. Refer to AN1709, “EMI radiated test” section.

3. Refer to AN1709, “EMI level classification” section.

Table 58. ESD absolute maximum ratings(1)

Symbol

Ratings

Conditions

Package

Class

Max

Unit

VESD(HBM)

Electrostatic discharge voltage

(human body model)

TA = 25 °C, conforming to

ANSI/ESDA/JEDEC JS-001

UFQFPN32

2000

VESD(CDM)

Electrostatic discharge voltage

(charge device model)

TA = 25 °C, conforming to

ANSI/ESDA/JEDEC JS-002

C2A

500

1. Evaluated by characterization, not tested in production, unless otherwise specified.

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