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MFS2301BMBACEP Datasheet(PDF) 75 Page - NXP Semiconductors |
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MFS2301BMBACEP Datasheet(HTML) 75 Page - NXP Semiconductors |
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75 / 230 page ![]() NXP Semiconductors FS23 Safety system basis chip (SBC) with power management, CAN FD and LIN transceivers TA = −40 °C to 125 °C, unless otherwise specified. VSHS = VSHS_UV to 28V, unless otherwise specified. VDDIO = 3V to 5.5V, unless otherwise specified. All voltages referenced to ground. Symbol Description Min Typ Max Unit LIN Bus VLIN_REC LIN receiver Recessive state, Active mode 0.6 x VSHS - - V VLIN_IN_DOM LIN receiver Dominant state, Active mode - - 0.4 x VSHS V VLIN_ CENTER LIN receiver center voltage (VLIN_REC + VLIN_IN_DOM)/2, Active mode 0.475 x VSHS 0.5 x VSHS 5.25 x VSHS V VLIN_ HYST LIN receiver hysteresis voltage (VLIN_REC - VLIN_IN_DOM), Active mode - - 0.175 x VSHS V VLIN_ DIODE LIN voltage drop at serial diode in pullup path, with RLIN_SLAVE and IDIODE = 0.9 mA 0.4 0.7 1.0 V RLIN_SLAVE LIN responder resistance 20 30 60 kΩ ILIM_LIN_ACT_DOM LIN current limitation Dominant state, Active mode 40 - 200 mA IQLIN_IN_REC LIN receiver recessive input leakage current - - 20 uA IQLIN_IN_DOM LIN receiver dominant input leakage current including pullup resistor -1 - - mA ILIN_ACT_DOM LIN current consumption, LIN Active mode, Dominant state, Tj = 150 °C. Measured via VSHS pin - - 2.70 mA ILIN_ACT_REC LIN current consumption, LIN Active mode, Recessive state, Tj = 150 °C. Measured via VSHS pin - - 1.35 mA ILIN_NO_GND LIN current consumption, control unit disconnected from ground (GNDDevice = VSHS), VBAT = 12 V, VLIN = 0 V to 18 V -1 - 1 uA ILIN_NO_BAT LIN current consumption, VBAT disconnected (VSHS = GND), VLIN = 0 V to 18 V - - 30 uA ILIN_WU LIN current consumption, wake capability, Tj = 85 °C, VBOS = 5 V. Measured via VSHS pin - - 3 uA CLIN LIN pin capacitance - - 2 pF Dynamic characteristics TLIN_EN Setup time needed when going to Active mode of the transceiver before sending data. 30 40 50 µs DLIN1 Duty cycle 1, THRec(max) = 0.744 x VSHS, THDom(max) = 0.581 x VSHS, VSHS = 7.0 V to 18 V, TLIN_BIT = 50 µs, D1 = TBus_rec(min)/(2 x TLIN_BIT) 39.6 - - % DLIN2 Duty cycle 2, THRec(min) = 0.422 x VSHS, THDom(min) = 0.284 x VSHS, VSHS = 7.6 V to 18 V, TLIN_BIT = 50 µs, D2 = TBus_rec(max)/(2 x TLIN_BIT) - - 58.1 % DLIN3 Duty cycle 3, THRec(max) = 0.778 x VSHS, THDom(max) = 0.616 x VSHS, VSHS = 7.0 V to 18 V, TLIN_BIT = 96 µs, D3 = TBus_rec(min)/(2 x TLIN_BIT) 41.7 - - % Table 33. LIN transceiver characteristics...continued FS23 All information provided in this document is subject to legal disclaimers. © 2024 NXP B.V. All rights reserved. Product data sheet Rev. 7.0 — 16 October 2024 Document feedback 75 / 230 |
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