| Electronic Components Datasheet Search |
|
BQ25713 Datasheet(PDF) 29 Page - Texas Instruments |
|
|
|||||||||||||||||||||||||||||
BQ25713 Datasheet(HTML) 29 Page - Texas Instruments |
|
29 / 111 page ![]() Table 8-1. Maximum Input Current Limit Configuration Table INDUCTANCE (IADPT Pin Resistance) EN_FAST_5MOHM RSR_RAC BIT MAXIMUM INPUT CURRENT LIMIT (IINDPM) 1.0 uH(90.9 kΩ) 1.5 uH(121 kΩ) 2.2 uH(137 kΩ) Xb RSNS_RAC=0b 6.35 A 1b RSNS_RAC=1b 6.35 A 0b RSNS_RAC=1b 10 A 3.3 uH(169 kΩ) Xb RSNS_RAC=0b 6.35 A Xb RSNS_RAC=1b 10 A 8.3.6 Input Voltage and Current Limit Setup The actual input current limit being adopted by the device is the lower setting of IIN_DPM and ILIM_HIZ pin. Register IIN_DPM input current limit setting will reset for below scenarios: • When adapter is removed (CHRG_OK is not valid). Note when adapter is removed IIN_HOST will be reset one time to 3.25 A, under battery only host is still able to overwrite IIN_HOST register with a new value. If the adapter plug back in and CHRG_OK is pulled up, IIN_HOST will not be reset again. • When input current optimization (ICO) is executed (EN_ICO_MODE=1b), the charger will automatically detect the optimized input current limit based on adapter output characteristic. The final IIN_DPM register setting could be different from IIN_HOST after ICO. The voltage regulation loop of the charger regulates the input voltage to prevent the input adapter collapsing. The VINDPM threshold should be configured based on no load input voltage level.Charger initiates a VBUS voltage measurement without any load (VBUS at no load) right before the converter is enabled. The default VINDPM threshold is VBUS at no load – 1.28 V. Host can adjust VINDPM threshold after device POR through InputVoltage register(0x0B/0Ah[]), range from 3.2V to 19.52V with LSB 64mV. After input current and voltage limits are set, the charger device is ready to power up. The host can always program the input current and voltage limit after the charger being powered up based on the input source type. 8.3.7 Battery Cell Configuration CELL_BATPRESZ pin is biased with a resistor divider from VDDA to GND. After REGN LDO is activated (VDDA rise up), the device detects the battery configuration through CELL_BATPRESZ pin bias voltage. No external cap is allowed at CELL_BATPRESZ pin. When CELL_BATPRESZ pin is pulled down to GND (because of battery removal) at the beginning of startup process, VSYS_MIN = 3.6 V and SYS_OVP = 25 V and Maximum charge voltage (REG0x05/04)) follow 1 cell default setting 4.2 V. VSYS and VBAT ADC offset is also determined by CELL_BATPRESZ pin setting, under 1S-4S VSYS/VBAT ADC holds 2.88-V offset, however under 5S detection VSYS/VBAT ADC only holds 8.16-V offset to cover higher voltage range. Refer to Table 8-2 for CELL_BATPRESZ pin configuration typical voltage for swept cell count. Table 8-2. Battery Cell Configuration CELL COUNT PIN VOLTAGE w.r.t. VDDA CHARGEVOLTAGE (REG0x05/04h) SYSOVP VSYS_MIN VSYS/VBAT ADC OFFSET 5S 100%(Directly connect to VDDA) 21.000 V 25 V 15.4 V 8.16 V 4S 75% 16.800 V 19.5 V 12.3 V 2.88 V 3S 55% 12.600 V 19.5 V 9.2 V 2.88 V 2S 40% 8.400 V 12 V 6.6 V 2.88 V 1S 25% 4.200 V 6 V 3.6 V 2.88 V Battery removal 0% 4.200 V 25 V 3.6 V 2.88 V www.ti.com BQ25730 SLUSE65A – FEBRUARY 2021 – REVISED JANUARY 2024 Copyright © 2024 Texas Instruments Incorporated Submit Document Feedback 29 Product Folder Links: BQ25730 |
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |